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R.M. Warner, Jr., R.D. Schrimpf, and P.D. Wang, "Explaining the Saturation of Potential Drop on the High Side of a Grossly Asymmetric Junction," J. Appl. Phys., vol. 57, pp. 1239-1241, 1985.

R.D. Schrimpf and R.M. Warner, Jr., "A Precise Scaling Length for Depleted Regions," Solid-St. Electronics, vol. 28, pp. 779-782, 1985.

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R.M. Warner, Jr. and R.D. Schrimpf, "BJT-MOSFET Transconductance Comparisons," IEEE Trans. Electron Devices, vol. ED-34, pp. 1061-1065, 1987.

B. Senitzky, R.D. Schrimpf, and W.J. Kerwin, "Efficiency of Photoconductive Switches," J. Appl. Phys., vol. 62, pp. 4798-4805, 1987.

R.D. Schrimpf, D.-H. Ju, and R.M. Warner, Jr., "Subthreshold Transconductance in the Long Channel MOSFET," Solid-St. Electronics, vol. 30, pp. 1043-1048, 1987.

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R.D. Schrimpf, P.J. Wahle, R.C. Andrews, D.B. Cooper, and K.F. Galloway, "Dose-Rate Effects on the Total-Dose Threshold-Voltage Shift of Power MOSFETs," IEEE Trans. Nucl. Sci., vol. NS-35, pp. 1536-1540, 1988.

R.D. Schrimpf and R.M. Warner, Jr., "An Approximate-Analytic Solution for the Forward Biased Step Junction," IEEE Trans. Electron Devices, vol. ED-35, pp. 698-700, 1988.

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M.J. Martinez, R.D. Schrimpf, and K.F. Galloway, "Analysis of Current-Mirror MOSFETs for Use in Total-Dose Radiation Environments," IEEE Trans. Nucl. Sci., vol. NS-36, pp. 2099-2103, 1989.

K.R. Davis, R.D. Schrimpf, F.E. Cellier, K.F. Galloway, D.I. Burton, and C.F. Wheatley, Jr., "Effects of Ionizing Radiation on Power MOSFET Termination Structures," IEEE Trans. Nucl. Sci., vol. NS-36, pp. 2104-2109, 1989.

K.F. Galloway and R.D. Schrimpf, "Overview of Space Radiation Effects on Power MOSFETs," Annales de Physique, vol. 14, pp. 119-128, 1989.

R.D. Schrimpf, K.F. Galloway, and P.J. Wahle, "Interface and Oxide Charge Effects on DMOS Channel Mobility," Electronics Lett., vol. 25, pp. 1156-1158, 1989.

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K.F. Galloway and R.D. Schrimpf, "MOS Device Degradation Due to Total-Dose Ionizing Radiation in the Natural Space Environment: A Review," Microelectronics J., vol. 21, pp. 67 81, 1990.

S.L. Kosier, R.D. Schrimpf, F.E. Cellier, and K.F. Galloway, "The Effects of Ionizing Radiation on the Breakdown Voltage of P-Channel Power MOSFETs," IEEE Trans. Nucl. Sci., vol. NS-37, pp. 2076-2082, 1990.

P.J. Wahle, R.D. Schrimpf, and K.F. Galloway, "Simulated Space Radiation Effects on Power MOSFETs in Switching Power Supplies," IEEE Trans. Ind. Appl., vol. IA-26, pp. 798-802, 1990.

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J.L. Titus, G.H. Johnson, R.D. Schrimpf, and K.F. Galloway, "Single Event Burnout of Power Bipolar Junction Transistors," IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1315-1322, 1991.

S.L. Kosier, R.D. Schrimpf, K.F. Galloway, and F.E. Cellier, "Predicting Worst-Case Charge Buildup in Power-Device Field Oxides," IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1383-1390, 1991.

H. Lendenmann, R.D. Schrimpf, and A.D. Bridges, "Novel Test Structure for the Measurement of Electrostatic Discharge Pulses," IEEE Trans. Semiconductor Manufacturing, vol. 4, pp. 213 218, 1991.

J.A. Babcock, J.L. Titus, R.D. Schrimpf, and K.F. Galloway, "Effects of Ionizing Radiation on the Noise Properties of DMOS Power Transistors," IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1304-1309, 1991.

E.W. Enlow, R.L. Pease, W.E. Combs, R.D. Schrimpf, and R.N. Nowlin, "Response of Advanced Bipolar Processes to Ionizing Radiation," IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1342-1351, 1991.

D. Zupac, K.W. Baum, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, "Comparison Between the Effects of Positive Noncatastrophic HBM ESD Stress in n-Channel and p-Channel Power MOSFETs," IEEE Electron Device Letters, vol. EDL-12, pp. 546-549, 1991.

A.J. Yiin, R.D. Schrimpf, and K.F. Galloway, "Gate-Charge Measurements for Irradiated DMOS Power Transistors," IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1352-1358, 1991.

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R.N. Nowlin, E.W. Enlow, R.D. Schrimpf, and W.E. Combs, "Trends in the Total-Dose Response of Modern Bipolar Transistors," IEEE Trans. Nucl. Sci., vol. 39, pp. 2026-2035, 1992.

G.H. Johnson, R.D. Schrimpf, K.F. Galloway, and R. Koga, "Temperature Dependence of Single-Event Burnout in N-Channel Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 39, pp. 1605-1612, 1992.

P. Augier, J.L. Todsen, D. Zupac, R.D. Schrimpf, K.F. Galloway, and J.A. Babcock, "Comparison of 1/f Noise in Irradiated Power MOSFETs Measured in the Linear and Saturation Regions," IEEE Trans. Nucl. Sci., vol. 39, pp. 2012-2017, 1992.

D. Zupac, K.F. Galloway, R.D. Schrimpf, and P. Augier, "Effects of Radiation-Induced Oxide Trapped Charge on Inversion-Layer Hole Mobility at 300 and 77 K," Appl. Phys. Lett., vol. 60, pp. 3156-3158, 1992.

D. Zupac, K.W. Baum, R.D. Schrimpf, and K.F. Galloway, "Detection of ESD-Induced Noncatastrophic Damage in P-Channel Power MOSFETs," J. Electrostatics, vol. 28, pp. 241 252, 1992.

S.C. Lee, G. Teowee, R.D. Schrimpf, D.P. Birnie, III, D.R. Uhlmann, and K.F. Galloway, "Total-Dose Radiation Effects on Sol-Gel Derived PZT Thin Films," IEEE Trans. Nucl. Sci., vol. 39, pp. 2036-2043, 1992.

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S.L. Kosier, R.D. Schrimpf, R.N. Nowlin, D.M. Fleetwood, M. DeLaus, R.L. Pease, W.E. Combs, A. Wei, and F. Chai, "Charge Separation for Bipolar Transistors," IEEE Trans. Nucl. Sci., vol. 40, pp. 1276-1285, 1993.

D. Zupac, R.D. Schrimpf, and K.F. Galloway, "ESD Effects in Power MOSFETs: A Review," Microelectronics J., vol. 24, pp. 125-138, 1993.

R.N. Nowlin, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease, and W.E. Combs, "Hardness Assurance and Testing Issues for Bipolar/BiCMOS Devices," IEEE Trans. Nucl. Sci., vol. 40, pp. 1686-1693, 1993.

G.H. Johnson, J.H. Hohl, R.D. Schrimpf, and K.F. Galloway, "Simulating Single-Event Burnout of N-Channel Power MOSFETs," IEEE Trans. Electron Devices, vol. 40, pp. 1001-1008, 1993.

J.L. Todsen, P. Augier, R.D. Schrimpf, and K.F. Galloway, "1/f Noise and Interface Trap Density in High Field Stressed pMOS Transistors," Electronics Lett., vol. 29, pp. 696-697, 1993.

J.R. Brews, M. Allenspach, R.D. Schrimpf, K.F. Galloway, J.L. Titus, and C.F. Wheatley, "A Conceptual Model of Single-Event Gate Rupture in Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 40, pp. 1959-1966, 1993.

D. Zupac, D. Pote, R.D. Schrimpf, and K.F. Galloway, "Annealing of ESD-Induced Damage in Power MOSFETs," J. Electrostatics, vol. 31, pp. 131-144, 1993.

D. Zupac, K.F. Galloway, R.D. Schrimpf, and P. Augier, "Radiation-Induced Mobility Degradation in p-Channel Double-Diffused Metal-Oxide-Semiconductor Power Transistors at 300 K and 77 K," J. Appl. Phys., vol. 73, pp. 2910-2915, 1993.

D. Zupac, K.F. Galloway, P. Khosropour, S.R. Anderson, R.D. Schrimpf, and P. Calvel, "Separation of Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Mobility in Irradiated Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 40, pp. 1307-1315, 1993.

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M.D. Ploor, R.D. Schrimpf, and K.F. Galloway, "Investigation of Possible Sources of 1/f Noise in Irradiated n-Channel Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 1902-1906, 1994.

H.G. Parks, R.D. Schrimpf, R. Craigin, R. Jones, and P. Resnick, "Quantifying the Impact of Homogeneous Metal Contamination Using Test Structure Metrology and Device Modeling," IEEE Trans. Semic. Manufacturing, vol. 7, pp. 249-258, 1994.

R.N. Nowlin, D.M. Fleetwood, and R.D.
Schrimpf, "Saturation of the Dose-Rate Response of BJTs Below 10 rad(SiO_{2})/s: Implications
for Hardness Assurance," IEEE Trans. Nucl. Sci., vol. 41, pp.
2637-2641,
1994.

I. Mouret, M. Allenspach, R.D. Schrimpf, J.R. Brews, K.F. Galloway, and P. Calvel, "Temperature and Angular Dependence of Substrate Response in SEGR," IEEE Trans. Nucl. Sci., vol. 41, pp. 2216-2221, 1994.

S.R. Anderson, D. Zupac, R.D. Schrimpf, and K.F. Galloway, "The Surface Generation Hump in Irradiated Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 2443-2451, 1994.

R.L. Pease, S.L. Kosier, R.D. Schrimpf, W.E. Combs, M. Davey, M. DeLaus, and D.M. Fleetwood, "Comparison of Hot-Carrier and Radiation Induced Increases in Base Current in Bipolar Transistors," IEEE Trans. Nucl. Sci., vol. 41, pp. 2567-2573, 1994.

S.L. Kosier, A. Wei, M.A. Shibib, R.D. Schrimpf, J.C. Desko, and K.F. Galloway, "Comparison of Termination Methods for Low-Voltage, Vertical Integrated Power Devices," Solid-State Electronics, vol. 37, pp. 1611-1617, 1994.

S.C. Witczak, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, "Synergetic Effects of Radiation Stress and Hot-Carrier Stress on the Current Gain of NPN Bipolar Junction Transistors," IEEE Trans. Nucl. Sci., vol. 41, pp. 2412-2419, 1994.

A. Wei, S.L. Kosier, R.D. Schrimpf, D.M. Fleetwood, and W.E. Combs, "Dose-Rate Effects on Radiation-Induced Bipolar Junction Transistor Gain Degradation," Appl. Phys. Lett., vol. 65, pp. 1918-1920, 1994.

M. Allenspach, J.R. Brews, I. Mouret, R.D. Schrimpf, and K.F. Galloway, "Evaluation of SEGR Threshold in Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 2160-2166, 1994.

S.L. Kosier, W.E. Combs, A. Wei, R.D. Schrimpf, D.M. Fleetwood, M. DeLaus, and R.L. Pease, "Bounding the Total-Dose Response of Modern Bipolar Transistors," IEEE Trans. Nucl. Sci., vol. 41, pp. 1864-1870, 1994.

D. Zupac, S.R. Anderson, R.D. Schrimpf, and K.F. Galloway, "Determining the Drain Doping in DMOS Transistors Using the Hump in the Leakage Current," IEEE Trans. Electron Devices, vol. 41, pp. 2326-2336, 1994.

S.C. Lee, G. Teowee, R.D. Schrimpf, D.P. Birnie, III, D.R. Uhlmann, and K.F. Galloway, "An I V Measurement Method and Its Application for Characterizing Ferroelectric PZT Thin Films," Integrated Ferroelectrics, vol. 4, pp. 31-43, 1994.

P. Khosropour, D.M. Fleetwood, K.F. Galloway, R.D. Schrimpf, and P. Calvel, "Evaluation of a Method for Estimating Low-Dose-Rate Irradiation Response of MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 2560-2566, 1994.

P. Khosropour, K.F. Galloway, D. Zupac, R.D. Schrimpf, and P. Calvel, "Application of Test Method 1019.4 to Non-Hardened Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 555 560, 1994.

D.M. Fleetwood, S.L. Kosier, R.N. Nowlin, R.D. Schrimpf, R.A. Reber, Jr., M. DeLaus, P.S. Winokur, A. Wei, W.E. Combs, and R.L. Pease, "Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates," IEEE Trans. Nucl. Sci., vol. 41, pp. 1871-1883, 1994.

G.H. Johnson, W.T. Kemp, R.D. Schrimpf, K.F. Galloway, M.R. Ackermann, and R.D. Pugh, "The Effects of Ionizing Radiation on Commercial Power MOSFETs Operated at Cryogenic Temperatures," IEEE Trans. Nucl. Sci., vol. 41, pp. 2530-2535, 1994.

S.M.Y. Hasan, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, "Effect of Neutron Irradiation on the Breakdown Voltage of Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 2719-2726, 1994.

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S.L. Kosier, A. Wei, R.D. Schrimpf, D.M. Fleetwood, M. DeLaus, R.L. Pease, and W.E. Combs, "Physically Based Comparison of Hot-Carrier-Induced and Ionizing-Radiation-Induced Degradation in BJTs," IEEE Trans. Electron Devices, vol. 42, pp. 436-444, 1995.

C.J. Rawn, E.A. Kneer, D.P. Birnie, III, M.N. Orr, R.D. Schrimpf, and G. Teowee, "Influence of Ti Interfacial Layers on the Electrical and Microstructural Properties of Sol-Gel Prepared PZT Films," Integrated Ferroelectrics, vol. 6, pp. 111-119, 1995.

A. Wei, S.L. Kosier, R.D. Schrimpf, W.E. Combs, and M. DeLaus, "Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJTs," IEEE Trans. Electron Devices, vol. 42, pp. 923-927, 1995.

J.R. Schifko, E.A. Kneer, D.P. Birnie, III, R.D. Schrimpf, and G. Teowee, "Passivation of Ferroelectric PZT Capacitors Using Spin-On Glass," Integrated Ferroelectrics, vol. 6, pp. 121 128, 1995.

C. J. Rawn, M. N. Orr, R. N. Vogt, D. P. Birnie, III, and R. D. Schrimpf, "Effect of RuOx Bottom Electrode Annealing Temperature on Sol-Gel Derived PZT Capacitors," Integrated Ferroelectrics, vol. 7, pp. 309, 1995.

F.K. Chai, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, "A Method for Predicting Breakdown Voltage of Power Devices with Cylindrical Diffused Junctions," Solid-State Electronics, vol. 38, pp. 1547-1549, 1995.

S.R. Anderson, R.D. Schrimpf, K.F. Galloway, and J.L. Titus, "Exploration of Heavy Ion Irradiation Effects on Gate Oxide Reliability in Power Devices," Microelectron. Reliab., vol. 35, pp. 603-608, 1995.

D.M. Schmidt, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease, R.J. Graves, G.H. Johnson, K.F. Galloway, and W.E. Combs, "Comparison of Ionizing-Radiation-Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJTs," IEEE Trans. Nucl. Sci., vol. 42, pp. 1541-1549, 1995.

R.D. Schrimpf, R.J. Graves, D.M. Schmidt, D.M. Fleetwood, R.L. Pease, W.E. Combs, and M. DeLaus, "Hardness Assurance Issues for Lateral PNP Bipolar Junction Transistors," IEEE Trans. Nucl. Sci., vol. 42, pp. 1641-1649, 1995.

M. Allenspach, I. Mouret, J.L. Titus, C.F. Wheatley, Jr., R.L. Pease, J.R. Brews, R.D. Schrimpf, and K.F. Galloway, "Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence," IEEE Trans. Nucl. Sci., vol. 42, pp. 1922-1927, 1995.

F.K. Chai, J.R. Brews, R.D. Schrimpf, and D.P. Birnie, III, "Limitations of the Uniform Effective Field Approximation Due to Doping of Ferroelectric Thin Film Capacitors," J. Appl. Phys., vol. 78, pp. 4766-4775, 1995.

S.C. Witczak, K.F. Galloway, R.D. Schrimpf,
and J.S. Suehle, "Relaxation of Si-SiO_{2} Interfacial Stress in Bipolar Screen Oxides due to
Ionizing Radiation," IEEE Trans. Nucl. Sci., vol. 42, pp. 1689-1697,
1995.

J.L. Titus, C.F. Wheatley, D.I. Burton, I. Mouret, M. Allenspach, J. Brews, R. Schrimpf, K. Galloway, and R.L. Pease, "Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETS; Development of a Semi-Empirical Expression," IEEE Trans. Nucl. Sci., vol. 42, pp. 1928-1934, 1995.

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I. Mouret, P. Calvel, M. Allenspach, J.L. Titus, C.F. Wheatley, K.A. LaBel, M.-C. Calvet, R.D. Schrimpf, and K.F. Galloway, "Measurement of a Cross-Section for Single-Event Gate Rupture in Power MOSFETs," IEEE Electron Device Letters, vol. 17, pp. 163-165, 1996.

G.H. Johnson, J.M. Palau, C. Dachs, K.F. Galloway, and R.D. Schrimpf, "A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 546-560, 1996.

R. D. Schrimpf, "Recent Advances in Understanding Total-Dose Effects in Bipolar Transistors," IEEE Trans. Nucl. Sci., vol. 43, pp. 787-796, 1996.

I. Mouret, M.-C. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. A. LaBel, J. L. Titus, C. F. Wheatley, R. D. Schrimpf, and K. F. Galloway, "Experimental Evidence of the Temperature and Angular Dependence in SEGR," IEEE Trans. Nucl. Sci., vol. 43, pp. 936-943, 1996.

S. C. Witczak, K. F. Galloway, R. D. Schrimpf,
J. L. Titus, J. R. Brews, and G. Prevost, "The Determination of Si-SiO_{2} Interface Trap
Density in Irradiated Four-Terminal VDMOSFETs Using Charge Pumping,"
IEEE Trans. Nucl. Sci., vol. 43, pp. 2558-2564, 1996.

S. C. Witczak, R. D. Schrimpf, K. F. Galloway, D. M. Fleetwood, R. L. Pease, J. M. Puhl, D. M. Schmidt, W. E. Combs, and J. S. Suehle, "Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction Transistors," IEEE Trans. Nucl. Sci., vol. 43, pp. 3151-3160, 1996.

D. M. Fleetwood, L. C. Riewe, J. R. Schwank, S. C. Witczak, and R. D. Schrimpf, "Radiation Effects at Low Electric Fields in Thermal, SIMOX, and Bipolar-Base Oxides," IEEE Trans. Nucl. Sci., vol. 43, pp. 2537-2546, 1996.

J. L. Titus, C. F. Wheatley, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. F. Brews, K. F. Galloway, and R. L. Pease, "Influence of Ion Beam Energy on SEGR Failure Thresholds of Vertical Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2938-2943, 1996.

G. H. Johnson, K. F. Galloway, R. D. Schrimpf, J. L. Titus, C. F. Wheatley, M. Allenspach, and C. Dachs, "A Physical Interpretation for the Single-Event-Gate-Rupture Cross-Section of N-Channel Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2932-2937, 1996.

M. Allenspach, C. Dachs, G. H. Johnson, R. D. Schrimpf, E. Lorfèvre, J. M. Palau, J. R. Brews, K. F. Galloway, J. L. Titus, and C. F. Wheatley, "SEGR and SEB in N-Channel Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2927-2931, 1996.

D. M. Schmidt, A. Wu, R. D. Schrimpf, D. M. Fleetwood, and R. L. Pease, "Modeling Ionizing-Radiation-Induced Gain Degradation of the Lateral PNP Bipolar Junction Transistor," IEEE Trans. Nucl. Sci., vol. 43, pp. 3032-3039, 1996.

L. Lee, H. G. Parks, and R. D. Schrimpf, "Interpretation of Experimentally Observed C-t Responses for Copper Contaminated Devices," Solid-State Electronics, vol. 39, pp. 369-373, 1996.

M. Allenspach, J. R. Brews, K. F. Galloway, G. H. Johnson, R. D. Schrimpf, R. L. Pease, J. L. Titus, and C. F. Wheatley, "SEGR: A Unique Failure Mode for Power MOSFETs in Spacecraft," Microelectron. Reliab., vol. 36, pp. 1871-1874, 1996.

J. M. Galbraith, K. F. Galloway, R. D. Schrimpf, and G. H. Johnson, "Reliability Challenges for Low Voltage/Low Power Integrated Circuits," Quality and Reliability Engineering International, vol. 12, pp. 271-279, 1996.

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L. Dusseau, T. L. Randolph, R. D. Schrimpf, K. F. Galloway, F. Saigne, J. Fesquet, J. Gasiot, and R. Ecoffet, "Prediction of Low Dose-Rate Effects in Power Metal Oxide Semiconductor Field Effect Transistors Based on Isochronal Annealing Measurements," J. Appl. Phys., vol. 81, pp. 2437-2441, 1997.

X. Montagner, P. Fouillat, A. Touboul, H. Lapuyade, R. D. Schrimpf, and K. F. Galloway, "Modélisation des effets des radiations sur les transistors bipolaires," Revue de L'Électricité et de L'Électronique, no. 4, pp. 67-70, 1997.

F. K. Chai, J. R. Brews, R. D. Schrimpf, and D. P. Birnie, III, "Domain Switching and Spatial Dependence of Permittivity in Ferroelectric Thin Films," J. Appl. Phys., vol. 82, pp. 2505-2516, 1997.

F. K. Chai, J. R. Brews, R. D. Schrimpf, and D. P. Birnie, III, "Profiling of Electrical Doping Concentration in Ferroelectrics," J. Appl. Phys., vol. 82, pp. 2517-2527, 1997.

F. Saigné, L. Dusseau, L. Albert, J. Fesquet, J. Gasiot, J. P. David, R. Eccofet, R. D. Schrimpf, and K. F. Galloway, "Experimental Determination of the Frequency Factor of Thermal Annealing Processes in Metal-Oxide-Semiconductor Gate-Oxide Structures," J. Appl. Phys., vol. 82, pp. 4102-4107, 1997.

K. F. Galloway and R. D. Schrimpf, "A Survey of Device Reliability Concerns for LV/LP IC Technologies," Microelectronic Engineering, vol. 39, pp. 225-234, 1997.

A. Wu, R. D. Schrimpf, H. J. Barnaby, D. M. Fleetwood, R. L. Pease, and S. L. Kosier, "Radiation-Induced Gain Degradation in Lateral PNP BJTs with Lightly and Heavily Doped Emitters," IEEE Trans. Nucl. Sci., vol. 44, pp. 1914-1921, 1997.

S. C. Witczak, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, R. C. Lacoe, D. C. Mayer, J. M. Puhl, R. L. Pease, and J. S. Suehle, "Hardness Assurance Testing of Bipolar Junction Transistors at Elevated Irradiation Temperatures," IEEE Trans. Nucl. Sci., vol. 44, pp. 1989 2000, 1997.

X. Montagner, P. Fouillat, R. Briand, R. D. Schrimpf, A. Touboul, K. F. Galloway, M. C. Calvet, and P. Calvel, "Implementation of Total Dose Effects in the Bipolar Junction Transistor Gummel-Poon Model," IEEE Trans. Nucl. Sci., vol. 44, pp. 1922-1929, 1997.

Y. F. Zhao, A. R. Patwary, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, "200 MeV Proton Damage Effects on Multi-Quantum-Well Laser Diodes," IEEE Trans. Nucl. Sci., vol. 44, pp. 1898-1905, 1997.

F. Saigné, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, J. P. David, R. D. Schrimpf, and K. F. Galloway, "Experimental Validation of an Accelerated Method of Oxide-Trap-Level Characterization for Predicting Long Term Thermal Effects in Metal Oxide Semiconductor Devices," IEEE Trans. Nucl. Sci., vol. 44, pp. 2001-2006, 1997.

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X. Montagner, R. Briand, P. Fouillat, R. D. Schrimpf, A. Touboul, K. F. Galloway, M. C. Calvet, and P. Calvel, "Dose-Rate and Irradiation Temperature Dependence of BJT SPICE Model Rad-Parameters," IEEE Trans. Nucl. Sci., vol. 45, pp. 1431-1437, 1998.

Y. F. Zhao, R. D. Schrimpf, A. R. Patwary, M. A. Neifeld, A. W. Al-Johani, R. A. Weller, and K. F. Galloway, "Annealing Effects on Multi-Quantum Well Laser Diodes after Proton Irradiation," IEEE Trans. Nucl. Sci., vol. 45, pp. 2826-2832, 1998.

J. E. Pizano, T. H. Ma, J. O. Attia, R. D. Schrimpf, K. F. Galloway, and A. F. Witulski, "Total Dose Effects on Power-MOSFET Switching Converters," Microelectronics Reliability, vol. 38, pp. 1935-1939, 1998.

R. J. Milanowski, M. P. Pagey, L. W. Massengill, R. D. Schrimpf, M. E. Wood, B. W. Offord, R. J. Graves, K. F. Galloway, C. J. Nicklaw, and E. P. Kelley, "TCAD-Assisted Analysis of Back-Channel Leakage in Irradiated Mesa SOI nMOSFETs," IEEE Trans. Nucl. Sci., vol. 45, pp. 2593-2599, 1998.

S. C. Witczak, R. C. Lacoe, D. C. Mayer, D. M. Fleetwood, R. D. Schrimpf, and K. F. Galloway, "Space Charge Limited Degradation of Bipolar Oxides at Low Electric Fields," IEEE Trans. Nucl. Sci., vol. 45, pp. 2339-2351, 1998.

S. C. Witczak, R. D. Schrimpf, H. J. Barnaby, R. C. Lacoe, D. C. Mayer, K. F. Galloway, R. L. Pease, and D. M. Fleetwood, "Moderated Degradation Enhancement of Lateral pnp Transistors Due to Measurement Bias," IEEE Trans. Nucl. Sci., vol. 45, pp. 2644-2648, 1998.

R. J. Graves, C. R. Cirba, R. D. Schrimpf, R. J. Milanowski, A. Michez, D. M. Fleetwood, S. C. Witczak, and F. Saigne, "Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2352-2360, 1998.

P. Cazenave, P. Fouillat, X. Montagner, H. Barnaby, R. D. Schrimpf, L. Bonora, J. P. David, A. Touboul, M.-C. Calvet, and P. Calvel, "Total Dose Effects on Gate Controlled Lateral PNP Bipolar Junction Transistors," IEEE Trans. Nucl. Sci., vol. 45, pp. 2577-2583, 1998.

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H. Barnaby, C. Cirba, R. D. Schrimpf, S. Kosier, P. Fouillat, and X. Montagner, "Minimizing Gain Degradation in Lateral PNP Bipolar Junction Transistors Using Gate Control," IEEE Trans. Nucl. Sci., vol. 46, pp. 1652-1659, 1999.

H. J. Barnaby, R. D. Schrimpf, R. L. Pease, P. Cole, T. Turflinger, J. Krieg, J. Titus, D. Emily, M. Gehlhausen, S. C. Witczak, M. C. Maher, and D. van Nort, "Identification of Degradation Mechanisms in a Bipolar Linear Voltage Comparator Through Correlation of Transistor and Circuit Response," IEEE Trans. Nucl. Sci., vol. 46, pp. 1666-1673, 1999.

P. E. Bunson, M. Di Ventra, S. T. Pantelides,
R. D. Schrimpf, and K. F. Galloway, "Ab Initio Calculations of H^{+} Energetics in SiO_{2}: Implications for
Transport," IEEE Trans. Nucl. Sci., vol. 46, pp. 1568-1573, 1999.

S. Kerns, D. Jiang, M. de la Bardonnie, F. Pelanchon, H. Barnaby, D. V. Kerns, Jr., R. D. Schrimpf, B. L. Bhuva, P. Mialhe, A. Hoffmann, and J.-P. Charles, "Light Emission Studies of Total Dose and Hot Carrier Effects on Silicon Junctions," IEEE Trans. Nucl. Sci., vol. 46, pp. 1804-1808, 1999.

J. Krieg, T. Turflinger, J. Titus, P. Cole, P. Baker, M. Gehlhausen, D. Emily, L. Yang, R. L. Pease, H. Barnaby, R. Schrimpf, and M. C. Maher, "Hardness Assurance Implications of Bimodal Total Dose Response in a Bipolar Linear Voltage Comparator," IEEE Trans. Nucl. Sci., vol. 46, pp. 1627-1632, 1999.

S. C. Lee, Y. F. Zhao, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, "Comparison of Lifetime and Threshold Current Damage Factors for Multi-Quantum-Well (MQW) GaAs/GaAlAs Laser Diodes Irradiated at Different Proton Energies," IEEE Trans. Nucl. Sci., vol. 46, pp. 1797-1803, 1999.

K. Warren, L. Massengill, R. Schrimpf, and H. Barnaby, "Analysis of the Influence of MOS Device Geometry on Predicted SEU Cross Sections," IEEE Trans. Nucl. Sci., vol. 46, pp. 1363-1369, 1999.

G. U. Youk, P. S. Khare, R. D. Schrimpf, L. W. Massengill, and K. F. Galloway, "Radiation-Enhanced Short Channel Effects Due to Multi-Dimensional Influence from Charges at Trench Isolation Oxides," IEEE Trans. Nucl. Sci., vol. 46, pp. 1830-1835, 1999.

H. J. Barnaby, R. J. Milanowski, R. D. Schrimpf, L. W. Massengill, and M. Pagey, "Modeling Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors with Non-Uniform Trapped Charge Distributions," J. Radiation Effects, vol. 17, pp. 75-85, 1999.

R. Milanowski, L. Massengill, R. Schrimpf, R. Graves, H. Barnaby, K. Galloway, M. Pagey, C. Nicklaw, E. Kelley, M. Wood, B. Offord, and J. Johann, "Radiation Hardened Semiconductor Technology Computer Aided Design," J. Radiation Effects, vol. 17, pp. 50-57, 1999.

R. Milanowski, L. Massengill, R. Schrimpf, M. Pagey, and C. Nicklaw, "Computational Split-Lot Study of the Effect of Implant Parameters on Total-Dose-Induced Leakage," J. Radiation Effects, vol. 17, pp. 66-74, 1999.

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S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L.
Wong, Y. L. Chen, K. L. Wang, M. Chen, Y. F. Zhao, R. D. Schrimpf, J.
C.
Keay, and K. F. Galloway, "Annealing Behavior of a Proton Irradiated Al_{x}Ga_{1-x}N/GaN High
Electron Mobility Transistor Grown by MBE," IEEE Trans. Electron
Devices, vol. 47, pp. 304-307, 2000.

H. J. Barnaby, C. Cirba, R. D. Schrimpf, S. L. Kosier, P. Fouillat, and X. Montagner, "Modeling BJT Radiation Response with Non-Uniform Energy Distributions of Interface Traps," IEEE Trans. Nucl. Sci., vol. 47, pp. 514-518, 2000.

S. K. Mukundan, M. P. Pagey, C. R. Cirba, R. D. Schrimpf, and K. F. Galloway, "TCAD-Based Simulation of Hot-Carrier Degradation in p-Channel MOSFETs Using Silicon Energy-Balance and Oxide Carrier-Transport Equations," IEEE J. Technology Computer Aided Design, www.jtcad.tec.ufl.edu/archive.html, 2000.

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, M. R. Shaneyfelt, T. Turflinger, J. F. Krieg, and M. C. Maher, "Origins of Total-Dose Response Variability in Linear Bipolar Microcircuits," IEEE Trans. Nucl. Sci., vol. 47, pp. 2342-2349, 2000.

Z. Marka, S. K. Singh, W. Wang, S. C. Lee, J.
Kavich, B. Glebov, S. N. Rashkeev, A. P. Karmarkar, R. G. Albridge, S.
T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, and N. H. Tolk,
"Characterization of X-ray Radiation Damage in Si/SiO_{2} Structures Using
Second Harmonic Generation," IEEE Trans. Nucl. Sci., vol. 47, pp.
2256-2261, 2000.

B. D. White, L. J. Brillson, S. C. Lee, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, Y.-M. Lee, and G. Lucovsky, "Low Energy Electron-Excited Nanoscale Luminescence: A Tool to Detect Trap Activation by Ionizing Radiation," IEEE Trans. Nucl. Sci., vol. 47, pp. 2276-2280, 2000.

S. T. Pantelides, S. N. Rashkeev, R. Buczko,
D. M. Fleetwood, and R. D. Schrimpf, "Reactions of Hydrogen with Si-SiO_{2} Interfaces," IEEE
Trans. Nucl. Sci., vol. 47, pp. 2262-2268, 2000.

P. E. Bunson, M. Di Ventra, S. T. Pantelides,
D. M. Fleetwood, and R. D. Schrimpf, "Hydrogen-Related Defects in
Irradiated SiO_{2}," IEEE Trans. Nucl. Sci., vol. 47, pp. 2289-2296,
2000.

F. Saigné, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, and K. F. Galloway, "Prediction of the One-Year Thermal Annealing of Irradiated Commercial Devices Based on Experimental Isochronal Curves," IEEE Trans. Nucl. Sci., vol. 47, pp. 2244-2248, 2000.

F. Saigné, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, and K. F. Galloway, "Experimental Procedure to Predict the Competition Between the Degradation Induced by Irradiation and Thermal Annealing of Oxide Trapped Charge in MOSFETs," IEEE Trans. Nucl. Sci., vol. 47, pp. 2329-2333, 2000.

C. J. Nicklaw, M. P. Pagey, S. T. Pantelides,
D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, J. E. Wittig, B. M.
Howard, E. Taw, W. H. McNeil, and J. F. Conley, Jr., "Defects and
Nanocrystals Generated by Si Implantation into a-SiO_{2}," IEEE Trans.
Nucl. Sci., vol. 47, pp. 2269-2275, 2000.

S.-C. Lee, A. Raparla, Y. F. Li, G. Gasiot, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, M. Featherby, and D. Johnson, "Total Dose Effects in Composite Nitride-Oxide Films," IEEE Trans. Nucl. Sci., vol. 47, pp. 2297-2304, 2000.

P. Adell, R. D. Schrimpf, H. J. Barnaby, R. Marec, C. Chatry, P. Calvel, C. Barillot, and O. Mion, "Analysis of Single-Event Transients in Analog Circuits," IEEE Trans. Nucl. Sci., vol. 47, pp. 2616-2623, 2000.

R. J. Milanowski, M. P. Pagey, J. F. Conley, Jr., L. W. Massengill, R. D. Schrimpf, and K. F. Galloway, "Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Three-Carrier Transport Model for Silicon Dioxide," J. Radiation Effects, vol. 18, pp. 115-125, 2000.

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L. J. Wise, R. D. Schrimpf, H. G. Parks, and K. F. Galloway, "A generalized model for the lifetime of microelectronic components, applied to storage conditions," Microelectronics Reliability, vol. 41, pp. 317-322, 2001.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Defect generation by hydrogen at the Si-SiO_{2}
interface," Phys. Rev. Lett., vol. 87, pp. 165506.1-165506.4, 2001.

D. G. Walker, T. S. Fisher, J. Liu, and R. D. Schrimpf, "Thermal modeling of single event burnout failure in semiconductor power devices," Microelectronics Reliability, vol. 41, pp. 571-578, 2001.

M. P. Pagey, R. D. Schrimpf, K. F. Galloway, C. J. Nicklaw, S. Ikeda, and S. Kamohara, "A Hydrogen-Transport-Based Interface-Trap-Generation Model for Hot-Carrier Reliability Prediction," IEEE Electron Device Letters, vol. 22, pp. 290-292, 2001.

A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and P. Calvel, "Application Determinance of Single Event Transient Characteristics in the LM111 Comparator," IEEE Trans. Nucl. Sci., vol. 48, pp. 1855-1858, 2001.

L. W. Massengill, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. Johnson, and G. Lucovsky, "Heavy-Ion-Induced Breakdown in Ultra-Thin Gate Oxides and High-k Dielectrics," IEEE Trans. Nucl. Sci., vol. 48, pp. 1904-1912, 2001.

H. J. Barnaby, R. D. Schrimpf, A. L. Sternberg, V. Berthe, C. R. Cirba, and R. L. Pease, "Proton Radiation Response Mechanisms in Bipolar Analog Circuits," IEEE Trans. Nucl. Sci., vol. 48, pp. 2074-2080, 2001.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Proton-Induced Defect Generation at the Si-SiO_{2}
Interface," IEEE Trans. Nucl. Sci., vol. 48, pp. 2086-2092, 2001.

F. Saigné, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, and K. F. Galloway, "Evaluation of MOS Devices' Total Dose Response Using the Isochronal Annealing Method," IEEE Trans. Nucl. Sci., vol. 48, pp. 2170-2173, 2001.

A. P. Karmarkar, B. K. Choi, R. D. Schrimpf, and D. M. Fleetwood, "Aging and Baking Effects on the Radiation Hardness of MOS Capacitors," IEEE Trans. Nucl. Sci., vol. 48, pp. 2158-2163, 2001.

R. L. Pease, A. Sternberg, L. W. Massengill, R. D. Schrimpf, S. Buchner, M. Savage, J. Titus, and T. Turflinger, "Critical Charge for Single-Event Transients (SETs) in Bipolar Linear Circuits," IEEE Trans. Nucl. Sci., vol. 48, pp. 1966-1972, 2001.

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B. K. Choi, D. M. Fleetwood, L. W. Massengill, R. D. Schrimpf, K. F.
Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R.
Schwank, Y. M. Lee, R. S. Johnson, and G. Lucovsky, "Reliability
Degradation of Ultra-thin Oxynitride and Al_{2}O_{3}
Gate
Dielectric Films Owing to Heavy-Ion Irradiation," Electron. Lett., vol.
34, pp. 157-158, 2002.

Y. Deval, H. Lapuyade, P. Fouillat, H. Barnaby, F. Darracq, R.
Briand, D. Lewis, and R. D. Schrimpf, "Evaluation of a Design
Methodology Dedicated to Dose-Rate-Hardened Linear Integrated
Circuits,"
IEEE Trans. Nucl. Sci., vol. 49, pp. 1468-1473, 2002.

J. Boch, F. Saigné, T. Maurel, F. Giustino, L. Dusseau, R. D.
Schrimpf, K. F. Galloway, J. P. David, R. Eccofet, J. Fesquet, and J.
Gasiot, "Dose and Dose-Rate Effects on NPN Bipolar Junction Transistors
Irradiated at High Temperature," IEEE Trans. Nucl. Sci., vol. 49, pp.
1474-1479, 2002.

A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, Y. Boulghassoul,
H. J. Barnaby, S. Buchner, R. L. Pease, and J. W. Howard, "Effect of
Amplifier Parameters on Single-Event Transients in an Inverting
Operational Amplifier," IEEE Trans. Nucl. Sci., vol. 49, pp. 1496-1501,
2002.

B. D. White, L. J. Brillson, M. Bataiev, D. M. Fleetwood, R. D.
Schrimpf, B. K. Choi, D. M. Fleetwood, and S. T. Pantelides, "Detection
of trap activation by ionizing radiation in SiO_{2} by
spatially
localized cathodoluminescence spectroscopy," Journal of Applied
Physics,
vol. 92, pp. 5729-5734, 2002.

P. C. Adell, R. D. Schrimpf, B. K. Choi, W. T. Holman, J. P. Attwood, C. R. Cirba, and K. F. Galloway, "Total-Dose and Single-Event Effects in Switching DC/DC Power Converters," IEEE Trans. Nucl. Sci., vol. 49, pp. 3217-3221, 2002.

H. J. Barnaby, S. K. Smith, R. D. Schrimpf, D. M. Fleetwood, and R. L. Pease, "Analytical Model for Proton Radiation Effects in Bipolar Devices," IEEE Trans. Nucl. Sci., vol. 49, pp. 2643-2649, 2002.

S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, and S. T. Pantelides, "Physical Model for Enhanced Interface-Trap Formation at Low Dose Rates," IEEE Trans. Nucl. Sci., vol. 49, pp. 2650-2655, 2002.

C. J. Nicklaw, Z.-Y. Lu, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "The Structure, Properties, and Dynamics of Oxygen
Vacancies
in Amorphous SiO_{2}," IEEE Trans. Nucl. Sci., vol. 49, pp.
2667-2673, 2002.

D. M. Fleetwood, H. D. Xiong, Z. Y. Lu, C. J. Nicklaw, J. A. Felix,
R. D. Schrimpf, and S. T. Pantelides, "Unified Model of Hole Trapping,
1/*f*
Noise, and Thermally Stimulated Current in MOS Devices," IEEE Trans.
Nucl. Sci., vol. 49, pp. 2674-2683, 2002.

B. D. White, M. Bataiev, L. J. Brillson, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, R. W. Dettmer, W. J. Schaff, J. G. Champlain, and U. K. Mishra, "Characterization of 1.8-MeV Proton-Irradiated AlGaN/GaN Field-Effect Transistor Structures by Nanoscale Depth-Resolved Luminescence Spectroscopy," IEEE Trans. Nucl. Sci., vol. 49, pp. 2695-2701, 2002.

J. Boch, F. Saigné, V. Mannoni, F. Giustino, R. D. Schrimpf, L. Dusseau, K. F. Galloway, J. Fesquet, J. Gasiot, and R. Ecoffet, "Model for High-Temperature Radiation Effects in n-p-n Bipolar-Junction Transistors," IEEE Trans. Nucl. Sci., vol. 49, pp. 2990-2997, 2002.

D. R. Ball, R. D. Schrimpf, and H. J. Barnaby, "Separation of Ionization and Displacement Damage Using Gate-Controlled Lateral PNP Bipolar Transistors," IEEE Trans. Nucl. Sci., vol. 49, pp. 3185-3190, 2002.

B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, L. W. Massengill, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. John, and G. Lucovsky, "Long-Term Reliability Degradation of Ultrathin Dielectric Films Due to Heavy-Ion Irradiation," IEEE Trans. Nucl. Sci., vol. 49, pp. 3045-3050, 2002.

J. A. Felix, D. M. Fleetwood, R. D. Schrimpf, J. G. Hong, G. Lucovsky, J. R. Schwank, and M. R. Shaneyfelt, "Total-Dose Radiation Response of Hafnium-Silicate Capacitors," IEEE Trans. Nucl. Sci., vol. 49, pp. 3191-3196, 2002.

X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf,
K. F. Galloway, R. A. Weller, K. McDonald, U. Mishra, and R. W.
Dettmer,
"Proton-Induced Degradation in AlGaAs/GaAs Heterojunction Bipolar
Transistors," IEEE Trans. Nucl. Sci., vol. 49, pp. 3213-3216, 2002.

Z.-Y. Lu, C. J. Nicklaw, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Structure, Properties, and Dynamics of Oxygen Vacancies in
Amorphous SiO_{2}," Phys. Rev. Lett., vol. 89, pp.
285505.1-285505.4, 2002.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Dual behavior of H^{+} at Si-SiO_{2}
interfaces: Mobility versus trapping," Applied Physics Letters, vol.
81,
pp. 1839-1841, 2002.

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H. J. Barnaby, R. D. Schrimpf, K. F. Galloway, D. R. Ball, R. L. Pease, and P. Fouillat, "Test structures for analyzing proton radiation effects in bipolar technologies," IEEE Trans. Semiconductor Manufacturing, vol. 16, pp. 253-258, 2003.

Y. Jiang, R. Pasternak, Z. Marka, Y. V. Shirokaya, J. K. Miller, S.
N. Rashkeev, Y. D. Glinka, I. E. Perakis, P. K. Roy, J. Kozub, B. K.
Choi, D. M. Fleetwood, R. D. Schrimpf, X. Liu, Y. Sasaki, J. K.
Furdyna,
and N. H. Tolk, "Spin/carrier dynamics at semiconductor interfaces
using
intense, tunable, ultra-fast lasers," Phys. Stat. Sol. (b), vol. 240,
pp. 490-499, 2003.

Z. Marka, R. Pasternak, R. G. Albridge, S. N. Rashkeev, S. T.
Pantelides, N. H. Tolk, B. K. Choi, D. M. Fleetwood, and R. D.
Schrimpf,
"Two-color optical technique for characterization of x-ray
radiation-enhanced electron transport in SiO_{2}," J. Appl.
Phys., vol. 93, 2003.

R. Pasternak, Y. V. Shirokaya, Z. Marka, J. K. Miller, S. N. Rashkeev,
S. T. Pantelides, N. H. Tolk, B. K. Choi, R. D. Schrimpf, and D. M.
Fleetwood, "Laser detection of radiation enhanced electron transport in
ultra-thin oxides," Nucl. Inst. and Meth. A, vol. 514, pp. 150-155,
2003.

V. A. K. Raparla, S. C. Lee, R. D. Schrimpf, D. M. Fleetwood, and K. F.
Galloway, "A Model of Radiation Effects in Nitride-Oxide Films for
Power
MOSFET Applications," Solid-State Electronics, vol. 47, pp. 775-783,
2003.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides,
"Radiation-induced acceptor deactivation in bipolar devices: Effects of
electric field," Appl. Phys. Lett., vol. 83, pp. 4646-4648, 2003.

P. C. Adell, R. D. Schrimpf, J. Boch, W. T. Holman, J. Stacey, A.
Sternberg, K. F. Galloway, and P. Ribero, "Total Dose and Single Event
Effects in DC/DC Converter Control Circuitry," IEEE Trans. Nucl. Sci.,
vol. 50, pp. 1867-1872, 2003.

J. Boch, R. Cizmarik, R. D. Schrimpf, D. M. Fleetwood, and F.
Saigne, "Impact of Mechanical Stress on Total-Dose Effects in Bipolar
Transistors," IEEE Trans. Nucl. Sci., vol. 50, pp. 2335-2340, 2003.

X. Hu, A. P. Karmarkar, D. M. Fleetwood, R. D. Schrimpf, R. D. Geil, R.
A. Weller, B. D. White, M. Bataiev, L. J. Brillson, and U. K. Mishra,
"Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility
Tranistors," IEEE Trans. Nucl. Sci., vol. 50, pp. 1791-1796, 2003.

B. Jun, X. Zhou, E. J. Montes, D. M. Fleetwood, R. D. Schrimpf, and
S. Cristoloveanu, "Charge Separation Techniques for Irradiated
Pseudo-MOS SOI Transistors," IEEE Trans. Nucl. Sci., vol. 50, pp.
1891-1895, 2003.

A. Kalavagunta, B. Choi, M. A. Neifeld, and R. D. Schrimpf, "Effects of
2 MeV Proton Irradiation on Operating Wavelength and Leakage Current of
Vertical Cavity Surface Emitting Lasers," IEEE Trans. Nucl. Sci., vol.
50, pp. 1982-1990, 2003.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Effects of Electric Field on Radiation-Induced Dopant
Deactivation by Hydrogen," IEEE Trans. Nucl. Sci., vol. 50, pp.
1896-1900, 2003.

R. A. Weller, A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and D.
M. Fleetwood, "Evaluating Average and Atypical Response in Radiation
Effects Simulations," IEEE Trans. Nucl. Sci., vol. 50, pp. 2265-2271,
2003.

B. D. White, M. Bataiev, S. H. Goss, X. Hu, A. Karmarkar, D. M.
Fleetwood, R. D. Schrimpf, S. T. Pantelides, W. J. Schaff, and L. J.
Brillson, "Electrical, Spectral, and Chemical Properties of 1.8 MeV
Proton Irradiated AlGaN/GaN HEMT Structures as a Function of Proton
Fluence," IEEE Trans. Nucl. Sci., vol. 50, pp. 1934-1941, 2003.

J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, T. L. Meisenheimer,
J. R. Schwank, R. D. Schrimpf, P. E. Dodd, E. P. Gusev, and C. D'Emic,
"Radiation-induced charge trapping in thin Al_{2}O_{3}/SiO_{x}N_{y}/Si(100)
gate dielectric stacks," IEEE Trans. Nucl. Sci., vol. 50, pp.
1910-1918, 2003.

R. D. Schrimpf, "Gain Degradation and Enhanced Low-Dose-Rate
Sensitivity in Bipolar Junction Transistors," Int. J. High Speed
Electronics and Systems, vol. 14, pp. 503-517, 2004. Also published as
a
chapter in "Radiation Effects and Soft Errors in Integrated Circuits
and
Electronic Devices," R. D. Schrimpf and D. M. Fleetwood, Eds., World
Scientific, Singapore, 2004.

K. Shenai, K. F. Galloway, and R. D. Schrimpf, "The Effects of Space
Radiation Exposure on Power MOSFETs: A Review," Int. J. High Speed
Electronics and Systems, vol. 14, pp. 445-463, 2004. Also published as
a
chapter in "Radiation Effects and Soft Errors in Integrated Circuits
and
Electronic Devices," R. D. Schrimpf and D. M. Fleetwood, Eds., World
Scientific, Singapore, 2004.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides,
"Hydrogen at the Si/SiO_{2} Interface: From Atomic-Scale
Calculations to Engineering Models," Int. J. High Speed Electronics and
Systems, vol. 14, pp. 575-580, 2004. Also published as a chapter in
"Radiation Effects and Soft Errors in Integrated Circuits and
Electronic
Devices," R. D. Schrimpf and D. M. Fleetwood, Eds., World Scientific,
Singapore, 2004.

J. A. Felix, H. D. Xiong, D. M. Fleetwood, E. P. Gusev, R. D. Schrimpf,
A. L. Sternberg, and C. D’Emic, "Interface trapping properties of Al_{2}O_{3}/SiO_{x}N_{y}/Si(100)
nMOSFETS after exposure to ionizing radiation," Microelectronic
Engineering, vol. 72, pp. 50-54, 2004.

J. A. Felix, J. R. Schwank, C. R. Cirba, R. D. Schrimpf, M. R. Shaneyfelt, D. M. Fleetwood, and P. E. Dodd, "Influence of Total-Dose Radiation on the Electrical Characteristics of SOI MOSFETs," Microelectronic Engineering, vol. 72, pp. 332-341, 2004.

X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf, S. C. Lee, S. Shojah-Ardalan, R. Wilkins, U. K. Mishra, and R. W. Dettmer, "The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors," IEEE Trans. Nucl. Sci., vol. 51, pp. 293-297, 2004.

B. K. Choi, W. P. Kang, J. L. Davidson, M. Howell, R. D. Schrimpf, and D. M. Fleetwood, "CVD Diamond Photoconductive Devices," Diamond and Related Materials, vol. 13, pp. 785-790, 2004.

X. J. Zhou, L. Tsetseris, S. N. Rashkeev, D. M. Fleetwood, R. D.
Schrimpf, and S. T. Pantelides, "Negative Bias-Temperature
Instabilities
in Metal-Oxide-Silicon Devices with SiO_{2} and SiO_{x}N_{y}/HfO_{2}
Gate Dielectrics," Appl. Phys. Lett., vol. 84, pp. 4394-4396, 2004.

J. M. Hutson, R. A. B. Devine, and R. D. Schrimpf, "Electrical and
radiation assisted passivation of Ta_{2}O_{5}/Si
interface," J. Appl. Phys., vol. 95, pp. 8463-8465, 2004.

A. Chatterjee, B. Bhuva, and R. Schrimpf, "High-Speed Light
Modulation in Avalanche Breakdown Mode for Si Diodes," IEEE Electron
Device Letters, vol. 25, pp. 628-630, 2004.

Y. Boulghassoul, P. C. Adell, J. D. Rowe, L. W. Massengill, R. D. Schrimpf, and A. L. Sternberg, "System-Level Design Hardening Based on Worst-Case ASET Simulations," IEEE Trans. Nucl. Sci., vol. 51, pp. 2787-2793, 2004.

J. Boch, F. Saigné, R. D. Schrimpf, D. M. Fleetwood, S. Ducret, L. Dusseau, J. P. David, J. Fesquet, J. Gasiot, and R. Ecoffet, "Effect of Switching From High to Low Dose Rate on Linear Bipolar Technology Radiation Response," IEEE Trans. Nucl. Sci., vol. 51, pp. 2896-2902, 2004.

J. Boch, F. Saigné, R. D. Schrimpf, D. M. Fleetwood, R.
Cizmarik, and D. Zander, "Elevated Temperature Irradiation at High Dose
Rate of Commercial Linear Bipolar ICs," IEEE Trans. Nucl. Sci., vol.
51,
pp. 2903-2907, 2004.

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N.
Bresson, S. Cristoloveanu, and N. H. Tolk, "Characterization of
multiple
Si/SiO_{2} interfaces in silicon-on-insulator materials via
second-harmonic generation," Appl. Phys. Lett., vol. 85, pp. 3095-3097,
2004.

C. R. Cirba, J. A. Felix, K. F. Galloway, R. D. Schrimpf, D. M.
Fleetwood, and S. Cristoloveanu, "Space-Radiation Effects in Advanced
SOI Devices and Alternative Gate Dielectrics," in Future Trends in
Microelectronics: The Nano, the Giga, and the Ultra, S. Luryi, J. Xu,
and A. Zaslavsky, Eds., Hoboken, NJ: John Wiley & Sons, 2004, pp.
115-126.

L. Tsetseris, X. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Dual role of fluorine at the Si–SiO_{2}
interface,"
Appl. Phys. Lett., vol. 85, pp. 4950-4952, 2004.

B. Jun, H. D. Xiong, A. L. Sternberg, C. R. Cirba, D. Chen, R. D.
Schrimpf, D. M. Fleetwood, J. R. Schwank, and S. Cristoloveanu, "Total
Dose Effects on Double Gate Fully Depleted SOI MOSFETs," IEEE Trans.
Nucl. Sci., vol. 51, pp. 3767-3772, 2004.

J. W. Stacey, R. D. Schrimpf, D. M. Fleetwood, and K. C. Holmes, "Using
Surface Charge Analysis to Characterize the Radiation Response of Si/SiO_{2}
Structures," IEEE Trans. Nucl. Sci., vol. 51, pp. 3686-3691, 2004.

A. Kalavagunta, R. Schrimpf, M. Neifeld, "Design Considerations for
Optical Systems in Ionizing and Nonionizing Radiation Environments,"
IEEE Trans. Nucl. Sci., vol. 51, pp. 3595-3602, 2004.

A. S. Kobayashi, A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and
R. A. Weller, "Spatial and Temporal Characteristics of Energy
Deposition
by Protons and Alpha Particles in Silicon," IEEE Trans. Nucl. Sci.,
vol. 51, pp. 3312-3317, 2004.

M. J. Gadlage, R. D. Schrimpf, J. M. Benedetto, P. H. Eaton, D. G.
Mavis, M. Sibley, K. Avery, and T. L. Turflinger, "Single Event
Transient Pulsewidths in Digital Microcircuits," IEEE Trans. Nucl.
Sci.,
vol. 51, pp. 3285-3290, 2004.

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S.
N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Cristoloveanu, and
N. H. Tolk, "Charge Trapping in Irradiated SOI Wafers Measured by
Second Harmonic Generation," IEEE Trans. Nucl. Sci., vol. 51, pp.
3231-3237, 2004.

J. Boch, F. Saigné, S. Ducret, R. D. Schrimpf, D. M. Fleetwood,
P. Iacconi, and L. Dusseau, "Total Dose Effects on Bipolar Integrated
Circuits: Characterization of the Saturation Region," IEEE Trans. Nucl.
Sci., vol. 51, pp. 3225-3230, 2004.

S. Ducret, F. Saigné, J. Boch, R. D. Schrimpf, D. M. Fleetwood,
J. R. Vaille, L. Dusseau, J. P. David, and R. Ecoffet, "Effect of
Thermal Annealing on Radiation-Induced Degradation of Bipolar
Technologies When the Dose Rate Is Switched From High to Low," IEEE
Trans. Nucl. Sci., vol. 51, pp. 3219-3224, 2004.

X. J. Chen, H. J. Barnaby, R. L. Pease, R. D. Schrimpf, D. G.
Platteter, and G. Dunham, "Radiation-Induced Base Current Broadening
Mechanisms in Gated Bipolar Devices," IEEE Trans. Nucl. Sci., vol. 51,
pp. 3178-3185, 2004.

M. Turowski, A. Raman, and R. D. Schrimpf, "Nonuniform
Total-Dose-Induced Charge Distribution in Shallow-Trench Isolation
Oxides," IEEE Trans. Nucl. Sci., vol. 51, pp. 3166-3171, 2004.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides,
"Effects of Hydrogen Motion on Interface Trap Formation and Annealing,"
IEEE Trans. Nucl. Sci., vol. 51, pp. 3158-3165, 2004.

H. D. Xiong, B. Jun, D. M. Fleetwood, R. D. Schrimpf, and J. R.
Schwank, "Charge Trapping and Low Frequency Noise in SOI Buried
Oxides,"
IEEE Trans. Nucl. Sci., vol. 51, pp. 3238-3242, 2004.

P. C. Adell, R. D. Schrimpf, W. T. Holman, J. L. Todd, S. Caveriviere,
R. R. Cizmarik, and K. F. Galloway, "Total Dose Effects in a Linear
Voltage Regulator," IEEE Trans. Nucl. Sci., vol. 51, pp. 3816-3821,
2004.

A. P. Karmarkar, B. Jun, D. M. Fleetwood, R. D. Schrimpf, R. A. Weller,
B. D. White, L. J. Brillson, and U. K. Mishra, "Proton Irradiation
Effects on GaN-Based High Electron-Mobility Transistors With Si-Doped Al_{x}Ga_{1-x}N
and Thick GaN Cap Layers," IEEE Trans. Nucl. Sci., vol. 51, pp.
3801-3806, 2004.

R. L. Pease, D. G. Platteter, G. W. Dunham, J. E. Seiler, H. J.
Barnaby, R. D. Schrimpf, M. R. Shaneyfelt, M. C. Maher, and R. N.
Nowlin, "Characterization of Enhanced Low Dose Rate Sensitivity (ELDRS)
Effects Using Gated Lateral PNP Transistor Structures," IEEE Trans.
Nucl. Sci., vol. 51, pp. 3773-3780, 2004.

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A. Chatterjee, R. D. Schrimpf, S. Pendharkar, and K. Banerjee, "Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted," J. Appl. Phys., vol. 97, article 084504, 2005.

L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Physical mechanisms of negative-bias temperature instability," Applied Physics Letters, vol. 86, article 142103, 2005.

P. C. Adell, O. Mion, R. D. Schrimpf, C. Chatry, P. Calvel, and M. R. Melotte, "Single Event Transient Propagation Through Digital Optocouplers," IEEE Trans. Nucl. Sci., vol. 52, pp. 1136 - 1139, 2005.

A. M. Albadri, R. D. Schrimpf, D. G. Walker, and S. V. Mahajan, "Coupled Electro-Thermal Simulations of Single Event Burnout in Power Diodes," IEEE Trans. Nucl. Sci., vol. 52, pp. 2194-2199, 2005.

J. Boch, F. Saigné, R. D. Schrimpf, J. R. Vaillé, L. Dusseau, S. Ducret, M. Bernard, E. Lorfèvre, and C. Chatry, "Estimation of Low-Dose-Rate Degradation on Bipolar Linear Integrated Circuits Using Switching Experiments," IEEE Trans. Nucl. Sci., vol. 52, pp. 2616-2621, 2005.

X. J. Chen, H. J. Barnaby, R. L. Pease, R. D. Schrimpf, D. Platteter, M. Shaneyfelt, and B. Vermeire, "Estimation and Verification of Radiation Induced N

R. R. Cizmarik, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, D. G. Platteter, M. R. Shaneyfelt, R. L. Pease, J. Boch, D. R. Ball, J. D. Rowe, and M. C. Maher, "The Impact of Mechanical Stress on the Total-Dose Response of Linear Bipolar Transistors With Various Passivation Layers," IEEE Trans. Nucl. Sci., vol. 52, pp. 1513-1517, 2005.

C. L. Howe, R. A. Weller, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, K. M. Warren, D. R. Ball, L. W. Massengill, K. A. LaBel, J. W. Howard, Jr., and N. F. Haddad, "Role of Heavy-Ion Nuclear Reactions in Determining On-Orbit Single Event Error Rates," IEEE Trans. Nucl. Sci., vol. 52, pp. 2182-2188, 2005.

A. P. Karmarkar, B. D. White, D. Buttari, D. M. Fleetwood, R. D. Schrimpf, R. A. Weller, L. J. Brillson, and U. K. Mishra, "Proton-Induced Damage in Gallium Nitride-Based Schottky Diodes," IEEE Trans. Nucl. Sci., vol. 52, pp. 2239-2244, 2005.

A. S. Kobayashi, D. R. Ball, K. M. Warren, R. A. Reed, N. Haddad, M. H. Mendenhall, R. D. Schrimpf, and R. A. Weller, "The Effect of Metallization Layers on Single Event Susceptibility," IEEE Trans. Nucl. Sci., vol. 52, pp. 2189-2193, 2005.

J. C. Pickel, R. A. Reed, R. Ladbury, P. W. Marshall, T. M. Jordan, G. Gee, B. Fodness, M. McKelvey, R. McMurray, K. Ennico, C. McCreight, A. Waczynski, E. Polidan, S. Johnson, R. A. Weller, M. H. Mendenhall, and R. D. Schrimpf, "Transient Radiation Effects in Ultra-Low Noise HgCdTe IR Detector Arrays for Space-Based Astronomy," IEEE Trans. Nucl. Sci., vol. 52, pp. 2657-2663, 2005.

M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, I. G. Batyrev, S. Wang, and S. T. Pantelides, "The Effects of Aging on MOS Irradiation and Annealing Response," IEEE Trans. Nucl. Sci., vol. 52, pp. 2642-2648, 2005.

L. Tsetseris, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, and S. T. Pantelides, "Common Origin for Enhanced Low-Dose-Rate Sensitivity and Bias Temperature Instability Under Negative Bias," IEEE Trans. Nucl. Sci., vol. 52, pp. 2265-2271, 2005.

K. M. Warren, R. A. Weller, M. H. Mendenhall, R. A. Reed, D. R. Ball, C. L. Howe, B. D. Olson, M. L. Alles, L. W. Massengill, R. D. Schrimpf, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The Contributions of Nuclear Reactions to Heavy Ion Single Event Upset Cross-Section Measurements in a High-Density SEU Hardened SRAM," IEEE Trans. Nucl. Sci., vol. 52, pp. 2125-2131, 2005.

R. Pasternak, B. Jun, R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, R. P. Dolan, R. W. Standley, and N. H. Tolk, "Investigation of Second-Harmonic Generation for SOI Wafer Metrology," in Silicon-on-Insulator Technology and Devices XII, vol. PV 2005-03, G. K. Celler, S. Cristoloveanu, J. G. Fossum, F. Gamiz, K. Izumi, and Y.-W. Kim, Eds. Pennington, NJ: Electrochemical Society, 2005, pp. 383-388.

M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, and B. Jun, "Recent Radiation Issues in Silicon-on-Insulator Devices," in Silicon-on-Insulator Technology and Devices XII, vol. PV 2005-03, G. K. Celler, S. Cristoloveanu, J. G. Fossum, F. Gamiz, K. Izumi, and Y.-W. Kim, Eds. Pennington, NJ: The Electrochemical Society, 2005, pp. 87-98.

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A. M. Albadri, R. D. Schrimpf, K. F. Galloway, and D. G. Walker, "Single event burnout in power diodes: Mechanisms and models," Microelectronics Reliability, vol. 46, pp. 317-325, 2006.

O. A. Amusan, A. F. Witulski, L. W. Massengill, B. L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J. D. Black, and R. D. Schrimpf, "Charge Collection and Charge Sharing in a 130 nm CMOS Technology," IEEE Trans. Nucl. Sci., vol. 53, pp. 3253-3258, 2006.

I. G. Batyrev, M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Effects of Water on the Aging and Radiation Response of MOS Devices," IEEE Trans. Nucl. Sci., vol. 53, pp. 3629-3635, 2006.

M. J. Beck, L. Tsetseris, M. Caussanel, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, "Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si," IEEE Trans. Nucl. Sci., vol. 53, pp. 3621-3628, 2006.

M. Bellini, B. Jun, T. Chen, J. D. Cressler, P. W. Marshall, D. Chen, R. D. Schrimpf, D. M. Fleetwood, and J. Cai, "X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI," IEEE Trans. Nucl. Sci., vol. 53, pp. 3182-3186, 2006.

M. F. Bernard, L. Dusseau, J. Boch, J. R. Vaille, F. Saigné, R. D. Schrimpf, E. Lorfevre, and J. P. David, "Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator," IEEE Trans. Nucl. Sci., vol. 53, pp. 3232-3236, 2006.

J. Boch, F. Saigné, L. Dusseau, and R. D. Schrimpf, "Temperature effect on geminate recombination," Applied Physics Letters, vol. 89, p. 042108, 2006.

J. Boch, F. Saigné, A. D. Touboul, S. Ducret, J. F. Carlotti, M. Bernard, R. D. Schrimpf, F. Wrobel, and G. Sarrabayrouse, "Dose rate effects in bipolar oxides: Competition between trap filling and recombination," Applied Physics Letters, vol. 88, p. 232113, 2006.

J. Boch, F. Saigné, R. D. Schrimpf, J. R. Vaille, L. Dusseau, and E. Lorfevre, "Physical Model for the Low-Dose-Rate Effect in Bipolar Devices," IEEE Trans. Nucl. Sci., vol. 53, pp. 3655-3660, 2006.

X. J. Chen, H. J. Barnaby, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, D. G. Platteter, and G. W. Dunham, "Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation," IEEE Trans. Nucl. Sci., vol. 53, pp. 3649-3654, 2006.

S. K. Dixit, S. Dhar, J. Rozen, S. Wang, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, J. R. Williams, and L. C. Feldman, "Total Dose Radiation Response of Nitrided and Non-nitrided SiO

L. Dusseau, M. F. Bernard, J. Boch, J. R. Vaille, F. Saigné, R. D. Schrimpf, E. Lorfevre, and J. P. David, "Analysis of total-dose response of a bipolar voltage comparator combining radiation experiments and design data," IEEE Trans. Nucl. Sci., vol. 53, pp. 1910-1916, 2006.

J. M. Hutson, V. Ramachandran, B. L. Bhuva, X. Zhu, R. D. Schrimpf, O. A. Amusan, and L. Massengill, "Single Event-Induced Error Propagation Through Nominally-off Transmission Gates," IEEE Trans. Nucl. Sci., vol. 53, pp. 3558-3562, 2006.

B. Jun, R. M. Diestelhorst, M. Bellini, G. Espinel, A. Appaswamy, A. P. G. Prakash, J. D. Cressler, D. Chen, R. D. Schrimpf, D. M. Fleetwood, M. Turowski, and A. Raman, "Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices," IEEE Trans. Nucl. Sci., vol. 53, pp. 3203-3209, 2006.

G. Lucovsky, D. M. Fleetwood, S. Lee, H. Seo, R. D. Schrimpf, J. A. Felix, J. Lüning, L. B. Fleming, M. Ulrich, and D. E. Aspnes, "Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO

B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, and D. McMorrow, "On-Chip Characterization of Single-Event Transient Pulsewidths," IEEE Trans. Device and Materials Reliability, vol. 6, pp. 542-549, 2006.

B. Narasimham, B. L. Bhuva, W. T. Holman, R. D. Schrimpf, L. W. Massengill, A. F. Witulski, and W. H. Robinson, "The Effect of Negative Feedback on Single Event Transient Propagation in Digital Circuits," IEEE Trans. Nucl. Sci., vol. 53, pp. 3285-3290, 2006.

J. A. Pellish, R. A. Reed, R. D. Schrimpf, M. L. Alles, M. Varadharajaperumal, G. Niu, A. K. Sutton, R. M. Diestelhorst, G. Espinel, R. Krithivasan, J. P. Comeau, J. D. Cressler, G. Vizkelethy, P. W. Marshall, R. A. Weller, M. H. Mendenhall, and E. J. Montes, "Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies," IEEE Trans. Nucl. Sci., vol. 53, pp. 3298-3305, 2006.

V. Ramachandran, B. Narasimham, D. M. Fleetwood, R. D. Schrimpf, W. T. Holman, A. F. Witulski, R. L. Pease, G. W. Dunham, J. E. Seiler, and D. G. Platteter, "Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator," IEEE Trans. Nucl. Sci., vol. 53, pp. 3223-3231, 2006.

R. A. Reed, R. A. Weller, R. D. Schrimpf, M. H. Mendenhall, K. M. Warren, and L. W. Massengill, "Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis," IEEE Trans. Nucl. Sci., vol. 53, pp. 3356-3362, 2006.

A. K. Sutton, A. P. Gnana Prakash, B. Jun, E. Zhao, M. Bellini, J. Pellish, R. M. Diestelhorst, M. A. Carts, A. Phan, R. Ladbury, J. D. Cressler, P. W. Marshall, C. J. Marshall, R. A. Reed, R. D. Schrimpf, and D. M. Fleetwood, "An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs," IEEE Trans. Nucl. Sci., vol. 53, pp. 3166-3174, 2006.

A. D. Tipton, J. A. Pellish, R. A. Reed, R. D. Schrimpf, R. A. Weller, M. H. Mendenhall, B. Sierawski, A. K. Sutton, R. M. Diestelhorst, G. Espinel, J. D. Cressler, P. W. Marshall, and G. Vizkelethy, "Multiple-Bit Upset in 130 nm CMOS Technology," IEEE Trans. Nucl. Sci., vol. 53, pp. 3259-3264, 2006.

Y. V. White, X. Lu, R. Pasternak, N. H. Tolk, A. Chatterjee, R. D. Schrimpf, D. M. Fleetwood, A. Ueda, and R. Mu, "Studies of charge carrier trapping and recombination processes in Si/SiO

X. J. Zhou, D. M. Fleetwood, L. Tsetseris, R. D. Schrimpf, and S. T. Pantelides, "Effects of Switched-bias Annealing on Charge Trapping in HfO

S. T. Pantelides, S. Wang, A. Franceschetti, R. Buczko, M. Di Ventra, S. N. Rashkeev, L. Tsetseris, M. H. Evans, I. G. Batyrev, L. C. Feldman, S. Dhar, K. McDonald, R. A. Weller, R. D. Schrimpf, D. M. Fleetwood, X. J. Zhou, J. R. Williams, C. C. Tin, G. Y. Chung, T. Isaacs-Smith, S. R. Wang, S. J. Pennycook, G. Duscher, K. Van Benthem, and L. M. Porter, “Si/SiO

S. T. Pantelides, M. H. Evans, D. M. Fleetwood, E. P. Gusev, J. D. Joannopoulos, Z. Lu, S. J. Pennycook, S. N. Rashkeev, R. D. Schrimpf, L. Tsetseris, K. V. Benthem, X.-G. Zhang, and X. J. Zhou, "Defect-related issues in high-K dielectrics," in Defects in High-K Gate Dielectric Stacks, E. Gusev, Ed. Amsterdam: Springer, 2006, pp. 189-202.

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M. H. Evans, M. Caussanel, R. D. Schrimpf, and S. T. Pantelides, "First-principles calculations of mobilities in ultrathin double-gate MOSFETs," J. Computational Electronics, accepted for publication, currently available through Online First, 2007.

E. J. Montes, R. A. Reed, J. A. Pellish, M. L. Alles, R. D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. Niu, A. K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J. P. Comeau, J. D. Cressler, P. W. Marshall, and G. Vizkelethy, "Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs," accepted for publication in IEEE Trans. Nucl. Sci., 2007.

K. M. Warren, B. D. Sierawski, R. A. Weller, R. A. Reed, M. H. Mendenhall, J. A. Pellish, R. D. Schrimpf, L. W. Massengill, M. E. Porter, and J. D. Wilkinson, "Predicting Thermal Neutron Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte-Carlo SimulationTools," IEEE Electron Device Letters, vol. 28, pp. 180-182, 2007.

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