Conference Publications and Presentations

1986

R.M. Warner, Jr. and R.D. Schrimpf, "BJT-MOSFET Transconductance Comparisons," in Proc. IEEE Bipolar Circuits and Technology Meeting, 1986, pp. 71-72.

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1989

P.J. Wahle, R.D. Schrimpf, and K.F. Galloway, "Simulated Space Radiation Effects on Power MOSFETs in Switching Power Supplies," in Conf. Record of the IEEE Industry Applications Society Meeting, 1989, pp. 1221-1226.

M.J. Martinez, J.P. Retzler, S.L. Rainwater, R.D. Schrimpf, and K.F. Galloway, "Hardness Enhancement for Power DMOS," in Government Microcircuit Applications Conference Digest of Papers, 1989, pp. 385-387.

R.D. Schrimpf, P.W.C. Hsueh, H. Lendenmann, and J.N. Fordemwalt, "Electrostatic-Discharge Detectors," in 1989 EOS/ESD Symp. Proc., 1989, pp. 84-87.

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1990

H. Lendenmann, R.D. Schrimpf, and A.D. Bridges, "Novel Test Structure for the Measurement of Electrostatic-Discharge Pulses," in Proc. IEEE Int. Conf. on Microelectronic Test Structures, 1990, pp. 149-153.

N.V. Barbara, R.D. Schrimpf, and W.J. Kerwin, "Ionizing-Radiation-Induced Degradation in Electronic Power Amplifiers," in Conf. Record of the IEEE Industry Applications Society Meeting, 1990, pp. 1667-1672.

W. Weber, R.D. Schrimpf, R.G. Myers, A.F. Witulski, and K.F. Galloway, "Radiation-Induced Changes in Power-MOSFET Gate-Charge Measurements," in Conf. Record of the IEEE Industry Applications Society Meeting, 1990, pp. 1673-1678.

J. Schmid, R. Craigin, C. Damianou, J. Hohl, R. Schrimpf, H. Parks, J. Ramberg, N. Brown, and R. Jones, "A Simple Model for Estimating Allowable Transition Metal Contamination Levels in DRAMs," in Proc. SRC Techcon, 1990, pp. 263-266.

R.D. Schrimpf, S.C. Lee, K.F. Galloway, S.L. Rainwater, and J.P. Retzler, "Circumvention-Hardened Field-Effect Transistors," in Government Microcircuit Applications Conference Digest of Papers, 1990, pp. 439-442.

S.L. Kosier, D. Zupac, R.D. Schrimpf, F.E. Cellier, K.F. Galloway, M.N. Darwish, C.A. Goodwin, and M.C. Dolly, "Optimization of a Two-Level Field-Plate Termination Structure for Integrated-Power Applications in Ionizing Radiation Environments," in Government Microcircuit Applications Conference Digest of Papers, 1990, pp. 435-438.

D. Zupac, K.W. Baum, W. Weber, R.D. Schrimpf, and K.F. Galloway, "ESD Effects on the Radiation Response of Power VDMOS Transistors," in EOS/ESD Symposium Proc., 1990, pp. 137-142.

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1991

R. Craigin, J. Schmid, C. Damianou, J. Hohl, R. Schrimpf, H. Parks, J. Ramberg, N. Brown, and R. Jones, "Electrically Monitoring Chemical Contamination," in Proc. Sixth Symp. on Automated Integrated Circuits Manufacturing, V. E. Akins and H. Harada, Eds., Pennington, NJ: The Electrochemical Society, 1991, pp. 317-328.

R.N. Nowlin, R.D. Schrimpf, E.W. Enlow, W.E. Combs, and R.L. Pease, "Mechanisms of Ionizing-Radiation-Induced Gain Degradation in Modern Bipolar Devices," in Proc. 1991 IEEE Bipolar Circuits and Tech. Mtg., 1991, pp. 174-177.

D. Zupac, K.F. Galloway, and R.D. Schrimpf, "Gamma-Radiation-Induced Inversion-Layer Hole Mobility Degradation in P-Channel Power MOSFETs at 300 K and 77 K," in RADECS (Radiation Effects on Components and Systems) 91 Proc., 1991, pp. 121-127.

D. Zupac, K.W. Baum, R.D. Schrimpf, and K.F. Galloway, "Detection of ESD-Induced Noncatastrophic Damage in P-Channel Power MOSFETs," in EOS/ESD Symp. Proc., 1991, pp. 151-157.

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1992

D. Zupac, D. Pote, R.D. Schrimpf, and K.F. Galloway, "Annealing of ESD-Induced Damage in Power MOSFETs," in Proc. EOS/ESD Symp., 1992, pp. 121-128.

G. Teowee, J.M. Boulton, E.A. Kneer, M.N. Orr, D.P. Birnie III, D.R. Uhlmann, S.C. Lee, K.F. Galloway, and R.D. Schrimpf, "Effect of Zr/Ti Stoichiometry Ratio on the Ferroelectric Properties of Sol-Gel Derived PZT Films," in Proc. 8th Int. Symp. on the Appl. of Ferroelectrics, 1992, pp. 41-44.

S.C. Lee, G. Teowee, R.D. Schrimpf, D.P. Birnie III, D.R. Uhlmann, and K.F. Galloway, "Fatigue Effect on the I-V Characteristics of Sol-Gel Derived PZT Thin Films," in Proc. 8th Int. Symp. on the Appl. of Ferroelectrics, 1992, pp. 77-80.

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1993

S.L. Kosier, R.D. Schrimpf, A. Wei, M. DeLaus, D.M. Fleetwood, and W.E. Combs, "Effects of Oxide Charge and Surface Recombination Velocity on the Excess Base Current of BJTs," in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 211-214, 1993.

G.H. Johnson, J.R. Brews, R.D. Schrimpf, and K.F. Galloway, "Analysis of the Time-Dependent Turn-On Mechanism for Single-Event Burnout of N-Channel Power MOSFETs," in RADECS 93 Proc., pp. 441-445, 1993.

P. Khosropour, K.F. Galloway, D. Zupac, R.D. Schrimpf, and P. Calvel, "Application of Test Method 1019.4 to Non-Hardened Power MOSFETs," in RADECS 93 Proc., pp. 300-305, 1993.

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1994

A. Wei, S.L. Kosier, R.D. Schrimpf, W.E. Combs, and M. DeLaus, "Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJTs," in Proc. IEEE Bipolar/BiCMOS Circuits and Tech. Mtg., pp. 201-204, 1994.

S.L. Kosier, M. DeLaus, A. Wei, R.D. Schrimpf, and A. Martinez, "Simple Technique for Improving the Hot-Carrier Reliability of Single-Poly Bipolar Transistors," in Proc. IEEE Bipolar/BiCMOS Circuits and Tech. Mtg., pp. 205-208, 1994.

J.R. Schmid, H.G. Parks, R. Craigin, and R.D. Schrimpf, "Estimating the Effect of Contamination-Induced Leakage Current in View of DRAM Architectural Trends," in Proc. Advanced Semiconductor Manufacturing Conference and Workshop, p. 96, 1994.

H.G. Parks, S.L. Kosier, R.D. Schrimpf, W.B. Henley, and L. Jastrzebski, "First Order Specification of Liquid Chemical Purity Requirements Based on Contaminant Deposition and Advanced DRAM Architecture," in Proc. Microcontamination '94, p. 132, 1994.

H.G. Parks and R.D. Schrimpf, "Metal Deposition, Metrology, and Device Degradation from Contamination in Semiconductor Processing Fluids," in Proc. 40th Ann. Tech. Mtg. IES (Invited), p. 338, 1994.

R.J. Graves, D.M. Schmidt, S.L. Kosier, A. Wei, R.D. Schrimpf, and K.F. Galloway, "Visualization of Ionizing-Radiation and Hot-Carrier Stress Response of Polysilicon Emitter BJTs," in IEDM Tech. Dig., pp. 233-236, 1994.

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1995

F.K. Chai, R.D. Schrimpf, J.R. Brews, D.P. Birnie, III, K.F. Galloway, R.N. Vogt, and M.N. Orr, "Effects of Scaling Thickness and Niobium Doping Level on Ferroelectric Thin Film Capacitor Memory Operation," in IEDM Tech. Dig., pp. 123-126, 1995.

I. Mouret, M.-C. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. A. LaBel, J. L. Titus, C. F. Wheatley, R. D. Schrimpf, and K. F. Galloway, "Experimental Evidence of the Temperature and Angular Dependence in SEGR," in RADECS 95 Proc., pp. 313-320, 1995.

R. D. Schrimpf, "Recent Advances in Understanding Total-Dose Effects in Bipolar Transistors," in RADECS 95 Proc. (Invited), pp. 9-18, 1995.

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1996

H.G. Parks, R.D. Schrimpf, and K.F. Galloway, "Contamination TCAD: A Tool Needed for Efficient Process Development," in Digest of Papers 1996 GOMAC Conference, pp. 287-290, 1996.

K.F. Galloway, G.H. Johnson, and R.D. Schrimpf, "Present Status of Power MOSFET Single Event Phenomena: A Review," in Proc. 2nd Int. Workshop on Radiation Effects of Semiconductor Devices for Space Applications (Invited), pp. 88-98, 1996.

M. Allenspach, J. R. Brews, K. F. Galloway, G. H. Johnson, R. D. Schrimpf, R. L. Pease, J. L. Titus, and C. F. Wheatley, "SEGR: A Unique Failure Mode for Power MOSFETs in Spacecraft," in Proc. of the 7th European Symposium on Reliability of Electron Devices, Failure Physics, and Analysis, 1996.

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1997

J. Y. Ahn, W. T. Holman, R. D. Schrimpf, K. F. Galloway, D. A. Bryant, P. Calvel, and M.-C. Calvet, "Design Issues for a Radiation-Tolerant Digital to-Analog Converter in a Commercial 2.0-µm BiCMOS Process," in RADECS Proc., pp. 120-125, 1997.

X. Montagner, R. Briand, P. Fouillat, R. D. Schrimpf, A. Touboul, K. F. Galloway, M. C. Calvet, and P. Calvel, "Dose-Rate and Irradiation Temperature Dependence of BJT SPICE Model Rad-Parameters," in RADECS Proc., pp. 216-222, 1997.

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1998

R. Milanowski, L. Massengill, R. Schrimpf, R. Graves, H. Barnaby, K. Galloway, M. Pagey, C. Nicklaw, and J. Johann, "Radiation Hardened Semiconductor Technology Computer Aided Design," in GOMAC Dig., pp. 573-577, 1998.

R. Milanowski, L. Massengill, R. Schrimpf, M. Pagey, and C. Nicklaw, "Computational Split-Lot Study of the Effect of Implant Parameters on Total-Dose-Induced Leakage," in GOMAC Dig., pp. 582-584, 1998.

H. J. Barnaby, R. J. Milanowski, R. D. Schrimpf, L. W. Massengill, and M. Pagey, "Modeling Ionizing Radiation Effects in Lateral PNP BJTs with Non Uniform Trapped Charge Distributions," in GOMAC Dig., pp. 585-588, 1998.

H. J. Barnaby, R. D. Schrimpf, D. M. Fleetwood, and S. L. Kosier, "The Effects of Emitter-Tied Field Plates on Lateral PNP Ionizing Radiation Response," in IEEE BCTM Proc., pp. 35-38, 1998.

F. Saigné, P. Adell, Y. Zhao, R. D. Schrimpf, K. F. Galloway, L. Dusseau, J. Fesquet, and J. Gasiot, "Utilisation des Recuits Isochrones pour la Mise en Evidence de Défauts Créés par une Irradiation aux Protons sur un Détecteur Optique Silicium du Commerce," in OPTORAD 98, Session 1: Detectors, 1998.

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1999

H. J. Barnaby, C. Cirba, R. D. Schrimpf, S. Kosier, P. Fouillat, and X. Montagner, "Modeling BJT Radiation Response with Non-Uniform Energy Distributions of Interface Traps," in RADECS Proc., pp. 75-79, 1999.

P. E. Bunson, R. D. Schrimpf, M. Di Ventra, and S. T. Pantelides, "Diffusion of H in SiO₂: An Ab-Initio Study," presented at APS March Meeting, 1999.

J. Hofmeister, H. G. Parks, B. Vermeire, Z. Murshalin, R. Graves, R. D. Schrimpf, and K. F. Galloway, "Concept and Initial Feasibility of Contamination TCAD by Integration with Commercial Software," in Proc. 10th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp. 426-429, 1999.

J. Liu, R. D. Schrimpf, L. Massengill, K. F. Galloway, and J. O. Attia, "Circuit-Level Model for Single-Event Burnout in N-Channel Power MOSFETs," in RADECS Proc., pp. 173-179, 1999.

R. Milanowski, M. Pagey, J. Conley, L. Massengill, R. Schrimpf, and K. Galloway, "Total Dose Radiation-Effects Simulation Using Three-Carrier Transport in SiO₂," in GOMAC Digest, pp. 758-761, 1999.

S. K. Mukundan, M. P. Pagey, R. D. Schrimpf, and K. F. Galloway, "Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations," in Integrated Reliability Workshop Final Report, pp. 92-97, 1999.

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2000

H. J. Barnaby, C. Cirba, R. D. Schrimpf, K. F. Galloway, M. Pagey, and R. Milanowski, "A Two Dimensional Engineering Model for Radiation-Induced Interface Trap Formation," in GOMAC Digest, pp. 613-616, 2000.

D. G. Walker, J. Liu, T. S. Fisher, and R. D. Schrimpf, "Thermal Characterization of Single Event Burnout Failure in Semiconductor Power Devices," in Proc. 16th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMITHERM), pp. 213-219, 2000.

D. M. Fleetwood, R. D. Schrimpf, L. W. Massengill, and K. F. Galloway, "Challenges in Modeling of Radiation Effects on Microelectronics," presented at Predictive Process Simulation Conference, 2000.

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2001

R. D. Schrimpf, "From Defects to Devices: Radiation Effects in Electronics," in GOMAC Digest, pp. 137-140, 2001. (invited)

A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, Y. Boulghassoul, H.J. Barnaby, S. Buchner, R. L. Pease, and J. W. Howard, "Effect of Amplifier Parameters on Single-Event Transients in an Inverting Operational Amplifier," in RADECS Proc., pp. 398-404, 2001.

J. Boch, F. Saigné, T. Maurel, F. Giustino, L. Dusseau, R. D. Schrimpf, K.F. Galloway, J. P. David, R. Ecoffet, J. Fesquet, and J. Gasiot, "Dose and Dose Rate Effects on NPN Bipolar Junction Transistors Irradiated at High Temperature," in RADECS Proc., pp. 357-362, 2001.

Y. Deval, H. Lapuyade, P. Fouillat, H. Barnaby, F. Darracq, R. Briand, D. Lewis, and R. D. Schrimpf, "Evaluation of a design methodology dedicated to dose rate hardened linear integrated circuits," in RADECS Proc., pp. 237-242, 2001.

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2002

C. R. Cirba, H. J. Barnaby, J. M. Hutson, J. A. Felix, R. D. Schrimpf, and D. M. Fleetwood, "Modeling Oxide Trapped Charge Annealing Processes In Irradiated SOI MOSFETs," in GOMAC Dig., pp. 496-499, 2002.

D. R. Ball, H. J. Barnaby, and R. D. Schrimpf, "Analysis of Proton Radiation Damage in Bipolar Transistors Using Gate Control," in GOMAC Dig., pp. 500-503, 2002.

H. J. Barnaby, R. D. Schrimpf, K. F. Galloway, D. R. Ball, R. L. Pease, and P. Fouillat, "Test Structures for Analyzing Radiation Effects in Bipolar Technologies," in Proc. Int. Conf. Microelectronic Test Structures, pp. 197-201, 2002.

R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, "A Multi-Disciplinary Approach to Modeling & Testing Microelectronic Materials & Devices," Invited Talk, National Space and Missiles Materials Symposium, Colorado Springs, CO, June 24-27, 2002.

R. D. Schrimpf, "Radiation-Induced Degradation of Bipolar Transistors and Linear Integrated Circuits," Invited Talk, RADECS Workshop, Padova, Italy, September 19-20, 2002.

X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf, S. C. Lee, S. Shojah-Ardalan, R. Wilkins, U. K. Mishra, and R. Dettmer, "The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors," in RADECS2002 Workshop Proc., pp. 17-20, 2002.

D. M. Fleetwood, S. N. Rashkeev, S. T. Pantelides, and R. D. Schrimpf, "Effects of hydrogen transport and reactions on microelectronics radiation response and reliability," European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Rimini, Italy, Oct. 7-11, 2002.

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2003

C. R. Cirba, S. Cristoloveanu, R. D. Schrimpf, L. C. Feldman, D. M. Fleetwood, and K. F. Galloway, "Radiation Hardness of Double-Gate Ultra-Thin SOI MOSFETs," in PV 2003-05 Silicon-on-Insulator Technology and Devices XI, S. Cristoloveanu, G. K. Celler, J. G. F. Gamiz, K. Izumi, and Y. W. Kim, Eds. Pennington, NJ: The Electrochemical Society, 2003, pp. 493-498.

D. M. Fleetwood, S. N. Rashkeev, Z. Y. Lu, C. J. Nicklaw, J. A. Felix, R. D. Schrimpf, and S. T. Pantelides, "Dipoles in SiO₂: Border Traps or Not?," in PV 2003-02 Silicon Nitride and Silicon Dioxide Thin Insulating Films (7th), R. E. Sah, K. B. Sunda, J. Deen, D. Landheer, W. D. Brown, and D. Misra, Eds. Pennington, NJ: The Electrochemical Society, 2003, pp. 291-307.

L. Tsetseris, X. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces," in MRS Proc. 786, pp. E3.3, 2003.

R. D. Schrimpf, C. R. Cirba, J. A. Felix, D. M. Fleetwood, S. Cristoloveanu, and K. F. Galloway, "Space Radiation Effects in Advanced SOI Devices and Alternative Gate Dielectrics," presented at Frontiers in Microelectronics, Corsica, France, June 23-27, 2003. (invited)

J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, E. P. Gusev, R. D. Schrimpf, and C. D’Emic, "The Effects of Interfacial Layer Thickness and Processing on the Radiation Response of High-K/SiO_xN_y/Si (100) Gate Dielectric Stacks," presented at IEEE Semiconductor Interface Specialists Conference, Washington, DC, Dec. 4-6, 2003.

R. Pasternak, Y. V. Shirokaya, Z. Marka, J. K. Miller, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, D. M. Fleetwood, and R. D. Schrimpf, "Contactless Characterization of Carrier Injection and Recombination Processes at Semiconductor Interfaces Using Second-Harmonic Generation," presented at March Meeting of The American Physical Society, Austin, TX, March 3-7, 2003.

J. A. Felix, J. R. Schwank, C. R. Cirba, R. D. Schrimpf, M. R. Shaneyfelt, D. M. Fleetwood, and P. E. Dodd, "Influence of Total-Dose Radiation on the Electrical Characteristics of SOI MOSFETs," presented at Insulating Films on Silicon Conference, Barcelona, Spain, June 18-20, 2003. (invited)

B. K. Choi, W. P. Kang, J. L. Davidson, M. Howell, R. D. Schrimpf, and D. M. Fleetwood, "CVD Diamond Photoconductive Devices," presented at DIAMOND 2003, 14th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Salzburg, Austria, September 7-12, 2003.

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2004

R. A. Weller, R. D. Schrimpf, R. A. Reed, A. L. Sternberg, A. S. Kobayashi, M. H. Mendenhall, L. W. Massengill, and D. M. Fleetwood, "Modeling Semiconductor Device Response Using Detailed Radiation Event Simulations," presented at Hardened Electronics and Radiation Technology Conference, Monterey, CA, March 2-5, 2004.

L. Tsetseris, X. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Hole-Controlled Defect Formation at Si-SiO₂ Interfaces in the Presence of Water and Fluorine-Related Species," presented at March Meeting of The American Physical Society, Montreal, Quebec, CA, March 22-26, 2004.

R. D. Schrimpf, R. A. Weller, D. M. Fleetwood, and S. T. Pantelides, "Physically-Based Radiation-Effects Models: Application to Design Hardening," presented at European Workshop on Radiation Hardened Electronics, Villard de Lans, France, 30 March-1 April, 2004. (invited)

M. J. Gadlage, R. D. Schrimpf, J. M. Benedetto, P. H. Eaton, and T. L. Turflinger, "Modeling and Verification of Single Event Transients in Deep Submicron Technologies," in IEEE Int. Reliability Physics Symposium Proc., pp. 673-674, 2004.

X. J. Zhou, S. N. Rashkeev, L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, and C. D’Emic, “Negative Bias-Temperature Instabilities in MOS Devices with SiO₂ and SiO_xN_yHfO₂ Gate Dielectrics,” presented at Electronic Materials Conference, Notre Dame, IN, June 23-25, 2004.

S. T. Pantelides, T. Bakos, D. M. Fleetwood, Z. Lu, C. Nicklaw, S. N. Rashkeev, and R. D. Schrimpf, "Point defects in amorphous versus crystalline SiO₂," presented at 3rd Int. conf. on computational modeling and simulation of materials, Sicily, Italy, May, 2004. (invited)

F. Baronti, P. C. Adell, W. T. Holman, R. D. Schrimpf, L. W. Massengill, A. Witulski, and M. Ceschia, "DC/DC Switching Power Converter with Radiation Hardened Digital Control based on SRAM FPGAs," presented at MAPLD Int. Conf., Washington, DC, September 8-10, 2004.

R. R. Cizmarik, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, D. G. Platteter, M. R. Shaneyfelt, R. L. Pease, J. Boch, D. R. Ball, J. D. Rowe, and M. C. Maher, “The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers,” presented at RADECS2004 Workshop, Madrid, Spain, Sept. 22-24, 2004.

D. Lunardini, B. Narasimham, V. Ramachandran, V. Srinivasan, R. D. Schrimpf, and W. H. Robinson, "A Performance Comparison between Hardened-by-Design and Conventional-Design Standard Cells," presented at RADECS2004 Workshop, Madrid, Spain, Sept. 22-24, 2004.

S. T. Pantelides, R. Buczko, D. M. Fleetwood, S. J. Pennycook, S. N. Rashkeev, R. D. Schrimpf, L. Tsetseris, and X. Zhou, "Atomic processes at semiconductor-oxide interfaces in microelectronic devices," presented at CECAM Workshop, Lyon, France, September, 2004. (invited)

R. D. Schrimpf, R. A. Weller, and R. A. Reed, "Physically Based Simulation of Single-Event Effects in Advanced Technologies," in Proc. 6th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Application, pp. 99-104, Tsukuba, Japan, October 6-8, 2004. (invited)

B. Jun, M. Fouillat, R. D. Schrimpf, D. M. Fleetwood, and S. Cristoloveanu, “Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide,” in Proc. IEEE SOI Conference, Charleston SC, October 4-7, pp. 30-31, 2004.

S. T. Pantelides, M. H. Evans, D. M. Fleetwood, J. D. Joannopoulos, Z. Lu, R. D. Schrimpf, S. J. Pennycook, S. N. Rashkeev, L. Tsetseris, K. Van Benthem, X. Zhang, and X. Zhou, "Atomic-scale challenges in nano-MOSFETS: Gate dielectrics and device modeling," presented at 2nd Int. Conf. on Microelectronics, Microstructures, and Nanotechnology, Athens, Greece, November, 2004. (invited)

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2005

R. D. Schrimpf, "Radiation Effects in Microelectronics," presented at School on the Effects of Radiation on Embedded Systems for Space Applications (SERESSA), Manaus, Brazil, November 21-25, 2005 (invited).

K. Akarvardar, S. Cristoloveanu, B. Dufrene, P. Gentil, R. D. Schrimpf, B. J. Blalock, J. A. Chroboczek, and M. M. Mojarradi, "Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation," in Proc. 35th European Solid-State Device Research Conf. (ESSDERC), 2005, pp. 89-92.

S. T. Pantelides, S. Wang. A. Franceschetti, R. Buczko, M. Di Ventra, S. N. Rashkeev, L. Tsetseris, M. H. Evans, I. G. Batyrev, L. C. Feldman, S. Dhar, K. McDonald, R. A. Weller, R. D. Schrimpf, D. M. Fleetwood, X. J. Zhou, J. R. Williams, C. C. Tin, G. Y. Chung, T. Isaacs-Smith, S. R. Wang, S. J. Pennycook, G. Duscher, K. van Benthem, L. M. Porter, and J. A. Cooper, Jr., "Si/SiO2 and SiC/SiO2 interfaces for MOSFETs - Challenges and Advances," International Conference on Silicon Carbide and Related Materials 2005, Pittsburgh, PA, Sept. 18-23, 2005 (invited).

D. M. Fleetwood, X. J. Zhou, L. Tsetseris, S. T. Pantelides, and R. D. Schrimpf, "Hydrogen model for negative-bias temperature instabilities in MOS gate insulators," 8th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics, 207th Meeting of the Electrochemical Society, Quebec City, QC, Canada, May 15-20, 2005 (invited).

S. T. Pantelides, M. H. Evans, D. M. Fleetwood, J. D. Joannopoulos, Z. Lu, R. D. Schrimpf, S. J. Pennycook, S. N. Rashkeev, L. Tsetseris, K. Van Benthem, X. Zhang, X. Zhou, "Atomic-scale challenges in nano-MOSFETs: Gate dielectrics and device modeling," European Materials Research Society, Strasbourg, France, May 2005 (invited).

S. T. Pantelides, M. H. Evans, D. M. Fleetwood, J. D. Joannopoulos, Z. Lu, R. D. Schrimpf, S. J. Pennycook, S. N. Rashkeev, L. Tsetseris, K. Van Benthem, X. Zhang, X. Zhou, "Atomic-scale challenges in nano-MOSFETs: Gate dielectrics and device modeling," American Physical Society March Meeting, Los Angeles, CA, March 2005 (invited).

X. J. Zhou, D. M. Fleetwood, L. Tsetseris, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, and C. D'Emic, "Effects of irradiation and bias-temperature stress on charge trapping in HfO2 Gate Dielectrics," IEEE Semiconductor Interface Specialists Conference, Washington, DC, Dec. 1-3, 2005.

L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, "Physical mechanisms of negative-bias temperature instability, MRS Spring Meeting, San Francisco, CA, March 28 - April 1, 2005.

M. L. Alles, D. R. Ball, L. W. Massengill, R. D. Schrimpf, K. A. Warren, and R. A. Weller, "Considerations for Single Event Effects in Non-Planar Multi-Gate SOI FETs," in Proc. IEEE SOI Conference, pp. 191-193 2005.

M. H. Evans, M. Caussanel, R. D. Schrimpf, and S. T. Pantelides, "First-Principles Modeling of Double-Gate UTSOI MOSFETs," in IEEE Int. Electron Devices Meeting Tech. Dig., pp. 611-614, 2005.

D. Ball, K. Warren, R. Weller, R. Reed, L. Massengill, R. Schrimpf, and N. Haddad, "Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology," presented at RADECS, Cap d'Agde, France, September 19-23, 2005.

J. M. Hutson, R. D. Schrimpf, and L. M. Massengill, "The Effects of Scaling and Well and Substrate Contact Placement on Single Event Latchup in Bulk CMOS Technology," presented at RADECS, Cap d'Agde, France, September 19-23, 2005.

M. Bernard, J. Boch, J.-R. Vaillé, F. Saigné, L. Dusseau, R. D. Schrimpf, E. Lorfevre, and J. P. David, "Analysis of Total-Dose Response of Bipolar Voltage Comparator Combining Experiments and Design Data," presented at RADECS, Cap d'Agde, France, September 19-23, 2005.

A. Kelly, P. C. Adell, A. F. Witulski, W. T. Holman, and R. D. Schrimpf, "Total Dose and Single Event Transients in Linear Voltage Regulators," presented at RADECS, Cap d'Agde, France, September 19-23, 2005.

B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, W. T. Holman, L. W. Massengill, W. H. Robinson, A. F. Witulski, J. D. Black, and D. McMorrow, "On-Chip Characterization of Single Event Transient Pulse Widths," presented at IEEE Nuclear and Space Radiation Effects Conference, Seattle, WA, July 11-15, 2005.

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2006

M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, N. H. Tolk, R. Pasternak, and R. W. Standley, "Experimental Evaluation of Second Harmonic Generation for Non-Invasive Contamination Detection in SOI Wafers," in IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Boston, MA, 2006, pp. 1-6.

K. Akarvardar, S. Chen, J. Vandersand, B. Blalock, R. Schrimpf, B. Prothro, C. Britton, S. Cristoloveanu, P. Gentil, and M. M. Mojarradi, "Four-Gate Transistor Voltage-Controlled Negative Differential Resistance Device and Related Circuit Applications," in IEEE Int. SOI Conference, 2006, pp. 71-72.

A. F. Witulski, A. Albadri, and R. D. Schrimpf, "Single-Event Effects on Electronics in Space," in IEEE Power Electronics Society Newsletter. vol. 18, 2006, pp. 14-16.

R. D. Schrimpf, R. A. Weller, M. H. Mendenhall, R. A. Reed, and L. W. Massengill, "Physical Mechanisms of Single Event Effects in Advanced Microelectronics," presented at Int. Conf. on the Applications of Accelerators in Research & Industry, Fort Worth, TX, 2006.

R. A. Reed, J. A. Pellish, R. A. Weller, M. Porter, J. Wilkinson, K. M. Warren, B. Sierawski, P. W. Marshall, and R. D. Schrimpf, "Applications of Heavy Ion Microprobe for Single Event Effects Analysis," presented at Int. Conf. on the Application of Accelerators in Research & Industry, Fort Worth, TX, 2006.

R. D. Schrimpf, "Radiation Effects in Microelectronics," presented at School on the Effects of Radiation on Embedded Systems for Space Applications (SERESSA), Sevilla, Spain, November 27-30, 2006 (invited).

N. F. Haddad, T. Bach, T. Conway, D. Lawson, J. Ross, J. Rodgers, A. Tipton, D. Ball, K. Warren, and R. Schrimpf, "Eliminating Low LET Sensitivities in Deep Sub-Micrometer SRAM through Non-intrusive Technology Features," presented at RADECS, Athens, Greece, 2006.

K. M. Warren, R. A. Weller, B. Sierawski, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, M. Porter, J. Wilkinson, K. A. LaBel, and J. Adams, "Application of RADSAFE to Model Single Event Upset Response of a 0.25 μm CMOS SRAM," presented at RADECS, Athens, Greece, 2006.

J. D. Black, B. L. Bhuva, M. L. Alles, L. W. Massengill, D. M. Fleetwood, R. D. Schrimpf, and K. F. Galloway, "Static and Dynamic Power Comparison of HBD Transistor-Based Circuits Designed in a Commercial 130 nm Technology," presented at RADECS, Athens, Greece, 2006.

D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, A. Dimoulas, A. Sotiropoulos, and Y. Panayiotatos, "Total Dose Response of Ge MOS Capacitors with HfO₂/Dy₂O₃ Gate Stacks," presented at RADECS, Athens, Greece, 2006.

S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, L. Tsetseris, S. N. Rashkeev, and X. J. Zhou, "Atomic scale mechanisms for radiation-induced phenomena in MOSFETs," presented at RADECS, Athens, Greece, Sept. 27-29, 2006. (invited)

D. M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, R. D. Schrimpf, and S. T. Pantelides, "Effects of device aging on microelectronics radiation response and reliability," presented at 25th International Conf. Microelectron. (MIEL 2006), Belgrade, Serbia and Montenegro, May 14-17, 2006. (invited)

S. T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf, "Hydrogen in MOSFETs: The Good, the Bad, and the Ugly," presented at International Workshop on Modeling of Reliability Issues, Vienna, Austria, May 2006. (invited)

R.A. Reed, R.A. Weller, R.D. Schrimpf, L.W. Massengill, M.H. Mendenhall, B. Sierawski, K.M. Warren, D.R. Ball, M. Alles, A. Sternberg, J.A. Pellish, C. Howe, "Applications of RADSAFE" Geant4 Space Users’ Meeting, SLAC, Palo Alto, CA, 11/Mar/2006.

R. A. Weller, M. H. Mendenhall, R. A. Reed, J. A. Pellish, B. D. Sierawski, L. W. Massengill and R. D. Schrimpf, “mred8 – A Python controlled Geant4 Application for Space Radiation Effects,” Geant4 Space Users’ Meeting, SLAC, Palo Alto, CA, 11/Mar/2006.

R.A. Reed, R.A. Weller, R.D. Schrimpf, L.W. Massengill, M.H. Mendenhall, K.M. Warren, B. Sierawski, D.R. Ball, M. Alles, A. Sternberg, J.A. Pellish, C. Howe, A. Tipton, K.A. LaBel, M. Xapsos, “Applications of RADSAFE for Single Event Effect Analysis,” presented at Geant4 Space Users Workshop, Pasadena, CA, 2006.

R.A. Weller, R. A. Reed, M. H. Mendenhall, K. M. Warren, D. R. Ball, J. A. Pellish, B. D. Sierawski, C. L. Howe, A. D. Tipton, R. D. Schrimpf, L. W. Massengill, M. Alles, L. Sternberg, A. F. Witulski, B. E. Templeton, M. A. Xapsos, K. A. LaBel, J. H. Adams, J. W. Watts “Geant4 and the Vanderbilt Radiation Effects Simulation Strategy, RADSAFE,” presented at Geant4 Space Users Workshop, Pasadena, CA, 2006.

J. A. Pellish, R. Reed, M. Alles, R. Schrimpf, M. Varadharajaperumal, G. Niu, A. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J. Comeau, J. Cressler, G. Vizkelethy, P. Marshall, R. Weller, M. Mendenhall, and E. Montes, “Monte Carlo modeling of proton events in deep trench isolation technologies using the combined capabilities of MRED and TCAD,” presented at the Single Event Effects Symposium, Long Beach, CA, 2006.

E. J. Montes, R. A. Reed, J. A. Pellish, M. L. Alles, R. D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. Niu, A. K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J. D. Cressler, G. Vizkelethy, and P. W. Marshall, “Single Event Effects Modeling in Silicon Germanium HBTs,” presented at the Single Event Effects Symposium, Long Beach, CA, 2006.

R. A. Reed, R. A. Weller, R. D. Schrimpf, L. W. Massengill, M. H. Mendenhall K. M. Warren D. R. Ball, J. A. Pellish B. D. Sierawski C. L. Howe, M. Alles, A. L. Sternberg A. F. Witulski A. D. Tipton, M. A. Xapsos, K. A. LaBel, “RADSAFE Development and Applications Overview”, presented at the Single Event Effects Symposium, Long Beach, CA, 2006. (invited)

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